Performance Analysis of Double Gate Junctionless TFET with respect to different high-k materials and oxide thickness

Pratikhya Raut, Umakanta Nanda, Deepak Kumar Panda, Hieu Pham Trung Nguyen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Double gate junction-less tunnel field effect transistor (DGJL-TFET) is investigated in this paper. The presence of double gate enhances high control over the channel for current conduction and the performance analysis of various parameters like input and output characteristics have been carried out by varying its dielectric materials with different dielectric constant and changing the thickness of oxide material. The complete device simulation and analysis are made using TCAD simulator. The simulation results depicting that the dielectric materials with high dielectric constant yields good electrical characteristics and the oxide with the least thickness value helps in better current conduction with good Ion/Ioff ratio. So this device is a promising device for low power application. Also by using dielectric with high dielectric constant increases the ON current which makes the device more flexible in nature.

Original languageEnglish (US)
Title of host publication2022 2nd International Conference on Artificial Intelligence and Signal Processing, AISP 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665442909
DOIs
StatePublished - 2022
Event2nd International Conference on Artificial Intelligence and Signal Processing, AISP 2022 - Vijayawada, India
Duration: Feb 12 2022Feb 14 2022

Publication series

Name2022 2nd International Conference on Artificial Intelligence and Signal Processing, AISP 2022

Conference

Conference2nd International Conference on Artificial Intelligence and Signal Processing, AISP 2022
Country/TerritoryIndia
CityVijayawada
Period2/12/222/14/22

All Science Journal Classification (ASJC) codes

  • Artificial Intelligence
  • Computer Networks and Communications
  • Computer Science Applications
  • Computer Vision and Pattern Recognition
  • Signal Processing
  • Information Systems and Management
  • Safety, Risk, Reliability and Quality

Keywords

  • DGJL-TFET
  • Dielectric
  • Oxide thickness
  • TCAD

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