Performance Analysis of Gate Engineered III-Nitride/β-Ga2O3Nano-HEMT for High-Power Nanoelectronics

G. Purnachandra Rao; Trupti Ranjan Lenka; Hieu Pham Trung Nguyen

doi:10.1109/ISCAS46773.2023.10181917

Performance Analysis of Gate Engineered III-Nitride/β-Ga₂O₃Nano-HEMT for High-Power Nanoelectronics

G. Purnachandra Rao, Trupti Ranjan Lenka, Hieu Pham Trung Nguyen

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

In this paper, a field-plated III-nitride nano-HEMT over the β-Ga2O3 substrate is designed with three different types of gate structures. The impact of different gate structures on transfer characteristics, drain characteristics, electric field distribution, and gate leakage characteristics of the proposed nano-HEMT are presented with profound analysis. The device with a double-head (DH) recessed gate length of 20n m exhibits better transfer characteristics, pinch-off characteristics and lower gate leakage current. It is believed that this piece of research will give an insightful thought on the improved III-nitride HEMT grown on the emerging β-Ga2O3 material as a substrate for high-power nanoelectronics applications.

Original language	English (US)
Title of host publication	ISCAS 2023 - 56th IEEE International Symposium on Circuits and Systems, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665451093
DOIs	https://doi.org/10.1109/ISCAS46773.2023.10181917
State	Published - 2023
Event	56th IEEE International Symposium on Circuits and Systems, ISCAS 2023 - Monterey, United States Duration: May 21 2023 → May 25 2023

Publication series

Name	Proceedings - IEEE International Symposium on Circuits and Systems
Volume	2023-May
ISSN (Print)	0271-4310

Conference

Conference	56th IEEE International Symposium on Circuits and Systems, ISCAS 2023
Country/Territory	United States
City	Monterey
Period	5/21/23 → 5/25/23

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Keywords

Ga2O3
GaN
Gate Engineered
HEMT
Ill-Nitride
Recessed Gate

Access to Document

10.1109/ISCAS46773.2023.10181917

Cite this

Rao, G. P., Lenka, T. R., & Nguyen, H. P. T. (2023). Performance Analysis of Gate Engineered III-Nitride/β-Ga₂O₃Nano-HEMT for High-Power Nanoelectronics. In ISCAS 2023 - 56th IEEE International Symposium on Circuits and Systems, Proceedings (Proceedings - IEEE International Symposium on Circuits and Systems; Vol. 2023-May). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCAS46773.2023.10181917

Rao, G. Purnachandra ; Lenka, Trupti Ranjan ; Nguyen, Hieu Pham Trung. / Performance Analysis of Gate Engineered III-Nitride/β-Ga₂O₃Nano-HEMT for High-Power Nanoelectronics. ISCAS 2023 - 56th IEEE International Symposium on Circuits and Systems, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (Proceedings - IEEE International Symposium on Circuits and Systems).

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title = "Performance Analysis of Gate Engineered III-Nitride/β-Ga2O3Nano-HEMT for High-Power Nanoelectronics",

abstract = "In this paper, a field-plated III-nitride nano-HEMT over the β-Ga2O3 substrate is designed with three different types of gate structures. The impact of different gate structures on transfer characteristics, drain characteristics, electric field distribution, and gate leakage characteristics of the proposed nano-HEMT are presented with profound analysis. The device with a double-head (DH) recessed gate length of 20n m exhibits better transfer characteristics, pinch-off characteristics and lower gate leakage current. It is believed that this piece of research will give an insightful thought on the improved III-nitride HEMT grown on the emerging β-Ga2O3 material as a substrate for high-power nanoelectronics applications.",

keywords = "Ga2O3, GaN, Gate Engineered, HEMT, Ill-Nitride, Recessed Gate",

author = "Rao, {G. Purnachandra} and Lenka, {Trupti Ranjan} and Nguyen, {Hieu Pham Trung}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 56th IEEE International Symposium on Circuits and Systems, ISCAS 2023 ; Conference date: 21-05-2023 Through 25-05-2023",

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doi = "10.1109/ISCAS46773.2023.10181917",

language = "English (US)",

series = "Proceedings - IEEE International Symposium on Circuits and Systems",

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Rao, GP, Lenka, TR & Nguyen, HPT 2023, Performance Analysis of Gate Engineered III-Nitride/β-Ga₂O₃Nano-HEMT for High-Power Nanoelectronics. in ISCAS 2023 - 56th IEEE International Symposium on Circuits and Systems, Proceedings. Proceedings - IEEE International Symposium on Circuits and Systems, vol. 2023-May, Institute of Electrical and Electronics Engineers Inc., 56th IEEE International Symposium on Circuits and Systems, ISCAS 2023, Monterey, United States, 5/21/23. https://doi.org/10.1109/ISCAS46773.2023.10181917

Performance Analysis of Gate Engineered III-Nitride/β-Ga₂O₃Nano-HEMT for High-Power Nanoelectronics. / Rao, G. Purnachandra; Lenka, Trupti Ranjan; Nguyen, Hieu Pham Trung.
ISCAS 2023 - 56th IEEE International Symposium on Circuits and Systems, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (Proceedings - IEEE International Symposium on Circuits and Systems; Vol. 2023-May).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - In this paper, a field-plated III-nitride nano-HEMT over the β-Ga2O3 substrate is designed with three different types of gate structures. The impact of different gate structures on transfer characteristics, drain characteristics, electric field distribution, and gate leakage characteristics of the proposed nano-HEMT are presented with profound analysis. The device with a double-head (DH) recessed gate length of 20n m exhibits better transfer characteristics, pinch-off characteristics and lower gate leakage current. It is believed that this piece of research will give an insightful thought on the improved III-nitride HEMT grown on the emerging β-Ga2O3 material as a substrate for high-power nanoelectronics applications.

AB - In this paper, a field-plated III-nitride nano-HEMT over the β-Ga2O3 substrate is designed with three different types of gate structures. The impact of different gate structures on transfer characteristics, drain characteristics, electric field distribution, and gate leakage characteristics of the proposed nano-HEMT are presented with profound analysis. The device with a double-head (DH) recessed gate length of 20n m exhibits better transfer characteristics, pinch-off characteristics and lower gate leakage current. It is believed that this piece of research will give an insightful thought on the improved III-nitride HEMT grown on the emerging β-Ga2O3 material as a substrate for high-power nanoelectronics applications.

KW - Ga2O3

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Rao GP, Lenka TR, Nguyen HPT. Performance Analysis of Gate Engineered III-Nitride/β-Ga₂O₃Nano-HEMT for High-Power Nanoelectronics. In ISCAS 2023 - 56th IEEE International Symposium on Circuits and Systems, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2023. (Proceedings - IEEE International Symposium on Circuits and Systems). doi: 10.1109/ISCAS46773.2023.10181917