Performance and modeling of amorphous silicon solar cells soaked at high light intensity

S. Wagner, X. Xu, X. R. Li, D. S. Shen, M. Isomura, M. Bennett, A. E. Delahoy, X. Li, J. K. Arch, J. L. Nicque, S. J. Fonash

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Pin solar cells were aged under high-intensity illumination at 60°C, well into saturation of their conversion efficiency. The cell characteristics were measured at intervals and were modeled numerically with a quantitative optoelectronic model. The i-layer defect density was measured separately. The results of the model agree well with the experimentally determined light-soaking dependent solar cell performance up to saturation. Saturation is reached at a time estimated to be equivalent to real-life operation of approximately 20 years. The agreement suggests that the light-induced defects in the bulk of the i-layer control the light-induced degradation of pin cells.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherPubl by IEEE
Pages1307-1313
Number of pages7
ISBN (Print)0879426365
StatePublished - 1992
EventConference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991 - Las Vegas, NV, USA
Duration: Oct 7 1991Oct 11 1991

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2
ISSN (Print)0160-8371

Other

OtherConference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991
CityLas Vegas, NV, USA
Period10/7/9110/11/91

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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