Performance and modeling of amorphous silicon solar cells soaked at high light intensity

  • S. Wagner
  • , X. Xu
  • , X. R. Li
  • , D. S. Shen
  • , M. Isomura
  • , M. Bennett
  • , A. E. Delahoy
  • , X. Li
  • , J. K. Arch
  • , J. L. Nicque
  • , S. J. Fonash

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Pin solar cells were aged under high-intensity illumination at 60°C, well into saturation of their conversion efficiency. The cell characteristics were measured at intervals and were modeled numerically with a quantitative optoelectronic model. The i-layer defect density was measured separately. The results of the model agree well with the experimentally determined light-soaking dependent solar cell performance up to saturation. Saturation is reached at a time estimated to be equivalent to real-life operation of approximately 20 years. The agreement suggests that the light-induced defects in the bulk of the i-layer control the light-induced degradation of pin cells.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherPubl by IEEE
Pages1307-1313
Number of pages7
ISBN (Print)0879426365
StatePublished - 1992
Externally publishedYes
EventConference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991 - Las Vegas, NV, USA
Duration: Oct 7 1991Oct 11 1991

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2
ISSN (Print)0160-8371

Other

OtherConference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991
CityLas Vegas, NV, USA
Period10/7/9110/11/91

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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