@inproceedings{167de20624f04dd78933b81f2bbb1dd2,
title = "Performance Enhancement of AlInGaN Quantum Well based UV-LED",
abstract = "In this paper, a light emitting diode in the ultra-violet range (UV-LED) with quantum well of AlInGaN is designed and analyzed through technology computer-aided design (TCAD) simulations. A thorough study is performed to find out the output optical characteristics of the LED. During the experiment we have varied the thickness of the well and aluminum concentration in the electron blocking layer in order to realize its impact on the device performance. The structure of the device and the characteristics of epitaxial layers play a very noteworthy role in the device's performance. The yield characteristics of the device depend on its structural layer. Because of this, various properties are optimized in order to improve the device's final performance. The LED device has gained importance over the past few decades. These are available for almost all ranges of wavelength right from deep ultra-violet to infra-red light region. The most efficient UV-LEDs are fabricated using AlInGaN with different atom proportions. The emission wavelength is correlated with the band gap of materials for such optoelectronic devices which can be varied from UV to IR.",
keywords = "AlInGaN, EBL, III-nitride, Quantum Well, UV-LED",
author = "Samadrita Das and Lenka, {T. R.} and Talukdar, {F. A.} and Velpula, {R. T.} and Barsha Jain and Nguyen, {H. P.T.}",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 18th IEEE India Council International Conference, INDICON 2021 ; Conference date: 19-12-2021 Through 21-12-2021",
year = "2021",
doi = "10.1109/INDICON52576.2021.9691746",
language = "English (US)",
series = "Proceedings of the 2021 IEEE 18th India Council International Conference, INDICON 2021",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "Proceedings of the 2021 IEEE 18th India Council International Conference, INDICON 2021",
address = "United States",
}