@article{1842af1687b94162becefe0689b3c32a,
title = "Phase change memory",
abstract = "In this paper, recent progress of phase change memory (PCM) is reviewed. The electrical and thermal properties of phase change materials are surveyed with a focus on the scalability of the materials and their impact on device design. Innovations in the device structure, memory cell selector, and strategies for achieving multibit operation and 3-D, multilayer high-density memory arrays are described. The scaling properties of PCM are illustrated with recent experimental results using special device test structures and novel material synthesis. Factors affecting the reliability of PCM are discussed.",
keywords = "Chalcogenides, PCRAM, PRAM, emerging memory, heat conduction, nonvolatile memory, phase change material, phase change memory (PCM), thermal physics",
author = "Wong, {H. S.Philip} and Simone Raoux and Sangbum Kim and Jiale Liang and Reifenberg, {John P.} and Bipin Rajendran and Mehdi Asheghi and Goodson, {Kenneth E.}",
note = "Funding Information: Manuscript received March 5, 2010; accepted May 24, 2010. Date of publication October 25, 2010; date of current version November 19, 2010. The work of H.-S. P. Wong, S. Kim, J. Liang, J. P. Reifenberg, M. Asheghi, and K. E. Goodson was supported in part by Intel Corporation, the Semiconductor Research Corporation under Contract 2009-VJ-1996, the National Science Foundation under Grant CBET-0853350, the member companies of the Stanford Non-Volatile Memory Technology Research Initiative (NMTRI), the Lawrence Berkeley National Laboratory Molecular Foundry, NXP, Samsung, Ovonyx, and IBM. H.-S. P. Wong, S. Kim, and J. Liang are with the Department of Electrical Engineering, Stanford University, Stanford, CA 94305 USA (e-mail: hspwong@stanford.edu; kimsangb@stanford.edu; liangjl@stanford.edu). S. Raoux and B. Rajendran are with IBM T.J. Watson Research Center, Yorktown Heights, NY 10598 USA (e-mail: simone_raoux@almaden.ibm.com; brajend@us.ibm.com). J. P. Reifenberg is with the Intel Corporation, Santa Clara, CA 95054, USA (e-mail: john.p.reifenberg@intel.com). M. Asheghi and K. E. Goodson are with the Department of Mechanical Engineering, Stanford University, Stanford, CA 94305 USA (e-mail: jreif@stanford.edu; masheghi@stanford.edu; goodson@stanford.edu). Funding Information: Dr. Goodson received the Allan Kraus Thermal Management Medal from the American Society of Mechanical Engineers (ASME), the Office of Naval Research (ONR) Young Investigator Award, and the National Science Foundation (NSF) Career Award. He received the Outstanding Reviewer Award from the ASME Journal of Heat Transfer, for which he served as an Associate Editor. He was a JSPS Visiting Professor at The Tokyo Institute of Technology and is the Editor-in-Chief of Nanoscale and Microscale Thermophysical Engineering. His research has been recognized through keynote lectures at INTERPACK, ITHERM, and Therminic as well as best paper awards at SEMI-THERM, SRC TECHCON, and the IEDM. Funding Information: Dr. Reifenberg{\textquoteright}s graduate studies were supported by a National Defense Science and Engineering Graduate (NDSEG) Fellowship through the Office of Naval Research (ONR), and he was awarded an Honorary Stanford Graduate Fellowship.",
year = "2010",
month = dec,
doi = "10.1109/JPROC.2010.2070050",
language = "English (US)",
volume = "98",
pages = "2201--2227",
journal = "Proceedings of the IEEE",
issn = "0018-9219",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",
}