Phase change memory

H. S.Philip Wong, Simone Raoux, Sangbum Kim, Jiale Liang, John P. Reifenberg, Bipin Rajendran, Mehdi Asheghi, Kenneth E. Goodson

Research output: Contribution to journalArticlepeer-review

1531 Scopus citations


In this paper, recent progress of phase change memory (PCM) is reviewed. The electrical and thermal properties of phase change materials are surveyed with a focus on the scalability of the materials and their impact on device design. Innovations in the device structure, memory cell selector, and strategies for achieving multibit operation and 3-D, multilayer high-density memory arrays are described. The scaling properties of PCM are illustrated with recent experimental results using special device test structures and novel material synthesis. Factors affecting the reliability of PCM are discussed.

Original languageEnglish (US)
Article number5609179
Pages (from-to)2201-2227
Number of pages27
JournalProceedings of the IEEE
Issue number12
StatePublished - Dec 2010
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Computer Science
  • Electrical and Electronic Engineering


  • Chalcogenides
  • PRAM
  • emerging memory
  • heat conduction
  • nonvolatile memory
  • phase change material
  • phase change memory (PCM)
  • thermal physics


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