Phase change memory - Opportunities and challenges

Bipin Rajendran, Hsiang Lan Lung, Chung Lam

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

This paper reviews the current development status of Phase Change Memory (PCM) and discusses an advanced scaling demonstration of this technology. A prospective view of possible applications for PCM is also presented.

Original languageEnglish (US)
Title of host publicationProceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD
Pages92-95
Number of pages4
DOIs
StatePublished - Dec 1 2007
Externally publishedYes
Event14th International Workshop on the Physics of Semiconductor Devices, IWPSD - Mumbai, India
Duration: Dec 16 2007Dec 20 2007

Publication series

NameProceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD

Other

Other14th International Workshop on the Physics of Semiconductor Devices, IWPSD
Country/TerritoryIndia
CityMumbai
Period12/16/0712/20/07

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Keywords

  • Amorphous semiconductors
  • CMOS memory integrated circuits
  • Non-volatile memory
  • Random access memory

Fingerprint

Dive into the research topics of 'Phase change memory - Opportunities and challenges'. Together they form a unique fingerprint.

Cite this