Phase change memory

H. S.Philip Wong; Simone Raoux; Sangbum Kim; Jiale Liang; John P. Reifenberg; Bipin Rajendran; Mehdi Asheghi; Kenneth E. Goodson

doi:10.1109/JPROC.2010.2070050

Phase change memory

H. S.Philip Wong
, Simone Raoux
, Sangbum Kim
, Jiale Liang
, John P. Reifenberg
, Bipin Rajendran
, Mehdi Asheghi
, Kenneth E. Goodson

Research output: Contribution to journal › Article › peer-review

1700 Scopus citations

Abstract

In this paper, recent progress of phase change memory (PCM) is reviewed. The electrical and thermal properties of phase change materials are surveyed with a focus on the scalability of the materials and their impact on device design. Innovations in the device structure, memory cell selector, and strategies for achieving multibit operation and 3-D, multilayer high-density memory arrays are described. The scaling properties of PCM are illustrated with recent experimental results using special device test structures and novel material synthesis. Factors affecting the reliability of PCM are discussed.

Original language	English (US)
Article number	5609179
Pages (from-to)	2201-2227
Number of pages	27
Journal	Proceedings of the IEEE
Volume	98
Issue number	12
DOIs	https://doi.org/10.1109/JPROC.2010.2070050
State	Published - Dec 2010
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Computer Science
Electrical and Electronic Engineering

Keywords

Chalcogenides
PCRAM
PRAM
emerging memory
heat conduction
nonvolatile memory
phase change material
phase change memory (PCM)
thermal physics

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10.1109/JPROC.2010.2070050

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title = "Phase change memory",

abstract = "In this paper, recent progress of phase change memory (PCM) is reviewed. The electrical and thermal properties of phase change materials are surveyed with a focus on the scalability of the materials and their impact on device design. Innovations in the device structure, memory cell selector, and strategies for achieving multibit operation and 3-D, multilayer high-density memory arrays are described. The scaling properties of PCM are illustrated with recent experimental results using special device test structures and novel material synthesis. Factors affecting the reliability of PCM are discussed.",

keywords = "Chalcogenides, PCRAM, PRAM, emerging memory, heat conduction, nonvolatile memory, phase change material, phase change memory (PCM), thermal physics",

author = "Wong, \{H. S.Philip\} and Simone Raoux and Sangbum Kim and Jiale Liang and Reifenberg, \{John P.\} and Bipin Rajendran and Mehdi Asheghi and Goodson, \{Kenneth E.\}",

note = "Funding Information: Dr. Goodson received the Allan Kraus Thermal Management Medal from the American Society of Mechanical Engineers (ASME), the Office of Naval Research (ONR) Young Investigator Award, and the National Science Foundation (NSF) Career Award. He received the Outstanding Reviewer Award from the ASME Journal of Heat Transfer, for which he served as an Associate Editor. He was a JSPS Visiting Professor at The Tokyo Institute of Technology and is the Editor-in-Chief of Nanoscale and Microscale Thermophysical Engineering. His research has been recognized through keynote lectures at INTERPACK, ITHERM, and Therminic as well as best paper awards at SEMI-THERM, SRC TECHCON, and the IEDM. Funding Information: Dr. Reifenberg{\textquoteright}s graduate studies were supported by a National Defense Science and Engineering Graduate (NDSEG) Fellowship through the Office of Naval Research (ONR), and he was awarded an Honorary Stanford Graduate Fellowship.",

year = "2010",

month = dec,

doi = "10.1109/JPROC.2010.2070050",

language = "English (US)",

volume = "98",

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AU - Asheghi, Mehdi

AU - Goodson, Kenneth E.

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Phase change memory

Abstract

All Science Journal Classification (ASJC) codes

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