Phase transition in a memristive suspended mos2 monolayer probed by opto- And electro-mechanics

Julien Chaste, Junhyeok Bang, Imen Hnid, Lama Khalil, Chen Si, Alan Durnez, Xavier Lafosse, Meng Qiang Zhao, A. T. Charlie Johnson, Shengbai Zhang, Abdelkarim Ouerghi

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


Semiconducting monolayers of a 2D material are able to concatenate multiple interesting properties into a single component. Here, by combining opto-mechanical and electronic measurements, we demonstrate the presence of a partial 2H-1T'phase transition in a suspended 2D monolayer membrane of MoS2. Electronic transport shows unexpected memristive properties in the MoS2 membrane, in the absence of any external dopants. A strong mechanical softening of the membrane is measured concurrently and may only be related to the 2H-1T'phase transition, which imposes a 3% directional elongation of the topological 1T'phase with respect to the semiconducting 2H. We note that only a few percent 2H-1T'phase switching is sufficient to observe measurable memristive effects. Our experimental results combined with first-principles total energy calculations indicate that sulfur vacancy diffusion plays a key role in the initial nucleation of the phase transition. Our study clearly shows that nanomechanics represents an ultrasensitive technique to probe the crystal phase transition in 2D materials or thin membranes. Finally, a better control of the microscopic mechanisms responsible for the observed memristive effect in MoS2 is important for the implementation of future devices.

Original languageEnglish (US)
Pages (from-to)13611-13618
Number of pages8
JournalACS Nano
Issue number10
StatePublished - Oct 27 2020
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • General Engineering
  • General Physics and Astronomy


  • 2D materials
  • Memristor
  • Nanomechanics
  • Phase transition
  • Photocurrent


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