Phonon-assisted tunneling and interface quality in nanocrystalline Si/amorphous SiO2 superlattices

L. Tsybeskov, G. F. Grom, P. M. Fauchet, J. P. McCaffrey, J. M. Baribeau, G. I. Sproule, D. J. Lockwood

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45 Scopus citations


We report on the interface quality and phonon-assisted tunneling in nanocrystalline Si (nc-Si)/ amorphous SiO2 (a-SiO2) superlattices (SLs) prepared by magnetron sputtering and thermal crystallization of nanometer-thick a-Si layers. Phonon-assisted tunneling is observed in a bipolar nc-Si based structure, which confirms that the nc-Si/a-SiO2 junction is not only abrupt but also nearly defect free. The conclusion is supported by capacitance-voltage measurements from which the estimated interface defect density is found to be ∼ 1011 cm-2 for an eight-period SL. Such high quality interfaces hold considerable promise for the development of nc-Si SL quantum devices.

Original languageEnglish (US)
Pages (from-to)2265-2267
Number of pages3
JournalApplied Physics Letters
Issue number15
StatePublished - Oct 11 1999
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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