Phonon-assisted tunneling and interface quality in nanocrystalline Si/amorphous SiO2 superlattices

L. Tsybeskov; G. F. Grom; P. M. Fauchet; J. P. McCaffrey; J. M. Baribeau; G. I. Sproule; D. J. Lockwood

doi:10.1063/1.124985

Phonon-assisted tunneling and interface quality in nanocrystalline Si/amorphous SiO₂ superlattices

L. Tsybeskov
, G. F. Grom
, P. M. Fauchet
, J. P. McCaffrey
, J. M. Baribeau
, G. I. Sproule
, D. J. Lockwood

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

We report on the interface quality and phonon-assisted tunneling in nanocrystalline Si (nc-Si)/ amorphous SiO₂ (a-SiO₂) superlattices (SLs) prepared by magnetron sputtering and thermal crystallization of nanometer-thick a-Si layers. Phonon-assisted tunneling is observed in a bipolar nc-Si based structure, which confirms that the nc-Si/a-SiO₂ junction is not only abrupt but also nearly defect free. The conclusion is supported by capacitance-voltage measurements from which the estimated interface defect density is found to be ∼ 10¹¹ cm^-2 for an eight-period SL. Such high quality interfaces hold considerable promise for the development of nc-Si SL quantum devices.

Original language	English (US)
Pages (from-to)	2265-2267
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	15
DOIs	https://doi.org/10.1063/1.124985
State	Published - Oct 11 1999
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Phonon-assisted tunneling and interface quality in nanocrystalline Si/amorphous SiO2 superlattices",

abstract = "We report on the interface quality and phonon-assisted tunneling in nanocrystalline Si (nc-Si)/ amorphous SiO2 (a-SiO2) superlattices (SLs) prepared by magnetron sputtering and thermal crystallization of nanometer-thick a-Si layers. Phonon-assisted tunneling is observed in a bipolar nc-Si based structure, which confirms that the nc-Si/a-SiO2 junction is not only abrupt but also nearly defect free. The conclusion is supported by capacitance-voltage measurements from which the estimated interface defect density is found to be ∼ 1011 cm-2 for an eight-period SL. Such high quality interfaces hold considerable promise for the development of nc-Si SL quantum devices.",

author = "L. Tsybeskov and Grom, \{G. F.\} and Fauchet, \{P. M.\} and McCaffrey, \{J. P.\} and Baribeau, \{J. M.\} and Sproule, \{G. I.\} and Lockwood, \{D. J.\}",

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doi = "10.1063/1.124985",

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TY - JOUR

T1 - Phonon-assisted tunneling and interface quality in nanocrystalline Si/amorphous SiO2 superlattices

AU - Tsybeskov, L.

AU - Grom, G. F.

AU - Fauchet, P. M.

AU - McCaffrey, J. P.

AU - Baribeau, J. M.

AU - Sproule, G. I.

AU - Lockwood, D. J.

PY - 1999/10/11

Y1 - 1999/10/11

N2 - We report on the interface quality and phonon-assisted tunneling in nanocrystalline Si (nc-Si)/ amorphous SiO2 (a-SiO2) superlattices (SLs) prepared by magnetron sputtering and thermal crystallization of nanometer-thick a-Si layers. Phonon-assisted tunneling is observed in a bipolar nc-Si based structure, which confirms that the nc-Si/a-SiO2 junction is not only abrupt but also nearly defect free. The conclusion is supported by capacitance-voltage measurements from which the estimated interface defect density is found to be ∼ 1011 cm-2 for an eight-period SL. Such high quality interfaces hold considerable promise for the development of nc-Si SL quantum devices.

AB - We report on the interface quality and phonon-assisted tunneling in nanocrystalline Si (nc-Si)/ amorphous SiO2 (a-SiO2) superlattices (SLs) prepared by magnetron sputtering and thermal crystallization of nanometer-thick a-Si layers. Phonon-assisted tunneling is observed in a bipolar nc-Si based structure, which confirms that the nc-Si/a-SiO2 junction is not only abrupt but also nearly defect free. The conclusion is supported by capacitance-voltage measurements from which the estimated interface defect density is found to be ∼ 1011 cm-2 for an eight-period SL. Such high quality interfaces hold considerable promise for the development of nc-Si SL quantum devices.

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DO - 10.1063/1.124985

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EP - 2267

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Phonon-assisted tunneling and interface quality in nanocrystalline Si/amorphous SiO₂ superlattices

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