Phonon properties and doping of Zn1-xMnxSe epilayers grown by molecular-beam epitaxy

K. C. Agarwal; B. Daniel; T. Hofmann; M. Schubert; C. Klingshirn; M. Hetterich

doi:10.1002/pssb.200564622

Phonon properties and doping of Zn_1-xMn_xSe epilayers grown by molecular-beam epitaxy

K. C. Agarwal
, B. Daniel
, T. Hofmann
, M. Schubert
, C. Klingshirn
, M. Hetterich

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We present far-infrared (FIR) reflection studies for Zn _1-xMn_xSe. It is found that a modified oscillator model provides improved agreement with the experimental data. Our results suggest an intermediate-mode behavior for the optical phonon modes in Zn _1-xMn_xSe. In addition to the known ZnSe-like and MnSe-like phonon resonances a weak defect-related feature 'D' is found below the MnSe-like phonon band. The frequency of this feature shows a temperature and Mn dependent red-shift. Furthermore, the observation of a drastic reduction in the free-electron concentration with increasing Mn content suggests a compensation effect related to the formation of Mn-related defect complexes.

Original language	English (US)
Pages (from-to)	914-918
Number of pages	5
Journal	Physica Status Solidi (B) Basic Research
Volume	243
Issue number	4
DOIs	https://doi.org/10.1002/pssb.200564622
State	Published - Mar 2006
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/pssb.200564622

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@article{c0fbf1fa7645428987a5ff029b34bda2,

title = "Phonon properties and doping of Zn1-xMnxSe epilayers grown by molecular-beam epitaxy",

abstract = "We present far-infrared (FIR) reflection studies for Zn 1-xMnxSe. It is found that a modified oscillator model provides improved agreement with the experimental data. Our results suggest an intermediate-mode behavior for the optical phonon modes in Zn 1-xMnxSe. In addition to the known ZnSe-like and MnSe-like phonon resonances a weak defect-related feature 'D' is found below the MnSe-like phonon band. The frequency of this feature shows a temperature and Mn dependent red-shift. Furthermore, the observation of a drastic reduction in the free-electron concentration with increasing Mn content suggests a compensation effect related to the formation of Mn-related defect complexes.",

author = "Agarwal, \{K. C.\} and B. Daniel and T. Hofmann and M. Schubert and C. Klingshirn and M. Hetterich",

year = "2006",

month = mar,

doi = "10.1002/pssb.200564622",

language = "English (US)",

volume = "243",

pages = "914--918",

journal = "Physica Status Solidi (B) Basic Research",

issn = "0370-1972",

publisher = "John Wiley and Sons Inc.",

number = "4",

}

TY - JOUR

T1 - Phonon properties and doping of Zn1-xMnxSe epilayers grown by molecular-beam epitaxy

AU - Agarwal, K. C.

AU - Daniel, B.

AU - Hofmann, T.

AU - Schubert, M.

AU - Klingshirn, C.

AU - Hetterich, M.

PY - 2006/3

Y1 - 2006/3

N2 - We present far-infrared (FIR) reflection studies for Zn 1-xMnxSe. It is found that a modified oscillator model provides improved agreement with the experimental data. Our results suggest an intermediate-mode behavior for the optical phonon modes in Zn 1-xMnxSe. In addition to the known ZnSe-like and MnSe-like phonon resonances a weak defect-related feature 'D' is found below the MnSe-like phonon band. The frequency of this feature shows a temperature and Mn dependent red-shift. Furthermore, the observation of a drastic reduction in the free-electron concentration with increasing Mn content suggests a compensation effect related to the formation of Mn-related defect complexes.

AB - We present far-infrared (FIR) reflection studies for Zn 1-xMnxSe. It is found that a modified oscillator model provides improved agreement with the experimental data. Our results suggest an intermediate-mode behavior for the optical phonon modes in Zn 1-xMnxSe. In addition to the known ZnSe-like and MnSe-like phonon resonances a weak defect-related feature 'D' is found below the MnSe-like phonon band. The frequency of this feature shows a temperature and Mn dependent red-shift. Furthermore, the observation of a drastic reduction in the free-electron concentration with increasing Mn content suggests a compensation effect related to the formation of Mn-related defect complexes.

UR - https://www.scopus.com/pages/publications/33645157696

UR - https://www.scopus.com/pages/publications/33645157696#tab=citedBy

U2 - 10.1002/pssb.200564622

DO - 10.1002/pssb.200564622

M3 - Article

AN - SCOPUS:33645157696

SN - 0370-1972

VL - 243

SP - 914

EP - 918

JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

IS - 4

ER -

Phonon properties and doping of Zn_1-xMn_xSe epilayers grown by molecular-beam epitaxy

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