TY - GEN
T1 - Phosphor-free III-nitride nanowire white light-emitting diodes
T2 - Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting
AU - Nguyen, H. P.T.
AU - Evo, Y.
N1 - Publisher Copyright:
© The Electrochemical Society.
PY - 2015
Y1 - 2015
N2 - Tremendous progress has been made in GaN-based nanowire light-emitting diodes (LEDs), which can exhibit drastically reduced dislocation densities and polarization fields, compared to the conventional quantum well devices. However, the performance of nanowire LEDs is limited due to the poor hole transport, the electron overflow, and the large surface nonradiative recombination. In this context, we have investigated the molecular beam epitaxial growth, fabrication and characterization of full-color InGaN/(Al)GaN dot-in-a-wire LEDs on Si substrates, wherein the emission characteristics are controlled by the dot properties in a single epitaxial step. With the use of p-type modulation doping, electron blocking layer (EBL), and core-shell heterostructures, we have further demonstrated superior performance phosphor-free white LEDs that can exhibit record high output power of ∼ 5.2 mW and unprecedentedly high color rendering index (CRI) of > 95.
AB - Tremendous progress has been made in GaN-based nanowire light-emitting diodes (LEDs), which can exhibit drastically reduced dislocation densities and polarization fields, compared to the conventional quantum well devices. However, the performance of nanowire LEDs is limited due to the poor hole transport, the electron overflow, and the large surface nonradiative recombination. In this context, we have investigated the molecular beam epitaxial growth, fabrication and characterization of full-color InGaN/(Al)GaN dot-in-a-wire LEDs on Si substrates, wherein the emission characteristics are controlled by the dot properties in a single epitaxial step. With the use of p-type modulation doping, electron blocking layer (EBL), and core-shell heterostructures, we have further demonstrated superior performance phosphor-free white LEDs that can exhibit record high output power of ∼ 5.2 mW and unprecedentedly high color rendering index (CRI) of > 95.
UR - http://www.scopus.com/inward/record.url?scp=84931384118&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84931384118&partnerID=8YFLogxK
U2 - 10.1149/06604.0213ecst
DO - 10.1149/06604.0213ecst
M3 - Conference contribution
AN - SCOPUS:84931384118
T3 - ECS Transactions
SP - 213
EP - 221
BT - Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5
A2 - Gusev, E. P.
A2 - Timans, P. J.
A2 - Roozeboom, F.
A2 - DeGendt, S.
A2 - Kakushima, K.
A2 - Narayanan, V.
A2 - Karim, Z.
PB - Electrochemical Society Inc.
Y2 - 24 May 2015 through 28 May 2015
ER -