Phosphor-free III-nitride nanowire white light-emitting diodes: Challenges and prospects

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Tremendous progress has been made in GaN-based nanowire light-emitting diodes (LEDs), which can exhibit drastically reduced dislocation densities and polarization fields, compared to the conventional quantum well devices. However, the performance of nanowire LEDs is limited due to the poor hole transport, the electron overflow, and the large surface nonradiative recombination. In this context, we have investigated the molecular beam epitaxial growth, fabrication and characterization of full-color InGaN/(Al)GaN dot-in-a-wire LEDs on Si substrates, wherein the emission characteristics are controlled by the dot properties in a single epitaxial step. With the use of p-type modulation doping, electron blocking layer (EBL), and core-shell heterostructures, we have further demonstrated superior performance phosphor-free white LEDs that can exhibit record high output power of ∼ 5.2 mW and unprecedentedly high color rendering index (CRI) of > 95.

Original languageEnglish (US)
Title of host publicationSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5
EditorsE. P. Gusev, P. J. Timans, F. Roozeboom, S. DeGendt, K. Kakushima, V. Narayanan, Z. Karim
PublisherElectrochemical Society Inc.
Pages213-221
Number of pages9
Edition4
ISBN (Electronic)9781607685395
DOIs
StatePublished - Jan 1 2015
EventSymposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting - Chicago, United States
Duration: May 24 2015May 28 2015

Publication series

NameECS Transactions
Number4
Volume66
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSymposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting
CountryUnited States
CityChicago
Period5/24/155/28/15

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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