Phosphor-free III-nitride red micro-light emitting diodes for display applications

Barsha Jain; Ravi Teja Velpula; H. P.T. Nguyen

Phosphor-free III-nitride red micro-light emitting diodes for display applications

Barsha Jain, Ravi Teja Velpula, H. P.T. Nguyen

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this study, we report highly stable phosphor-free InGaN/AlGaN spontaneously formed core-shell nanowire red micro-light emitting diodes (μLEDs) with 30 × 30 μm² mesa area directly grown on Si (111) substrates using molecular beam epitaxy.

Original language	English (US)
Article number	STu2C.1
Journal	Optics InfoBase Conference Papers
State	Published - 2021
Event	CLEO: Science and Innovations, CLEO:S and I 2021 - Part of Conference on Lasers and Electro-Optics, CLEO 2021 - Virtual, Online, United States Duration: May 9 2021 → May 14 2021

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Mechanics of Materials

Cite this

@article{605c5b557fd54d608343a8f9f60f4ccd,

title = "Phosphor-free III-nitride red micro-light emitting diodes for display applications",

abstract = "In this study, we report highly stable phosphor-free InGaN/AlGaN spontaneously formed core-shell nanowire red micro-light emitting diodes (μLEDs) with 30 × 30 μm2 mesa area directly grown on Si (111) substrates using molecular beam epitaxy.",

author = "Barsha Jain and Velpula, {Ravi Teja} and Nguyen, {H. P.T.}",

note = "Publisher Copyright: {\textcopyright} OSA 2021, {\textcopyright} 2021 The Author(s); CLEO: Science and Innovations, CLEO:S and I 2021 - Part of Conference on Lasers and Electro-Optics, CLEO 2021 ; Conference date: 09-05-2021 Through 14-05-2021",

year = "2021",

language = "English (US)",

journal = "Optics InfoBase Conference Papers",

issn = "2162-2701",

}

TY - JOUR

T1 - Phosphor-free III-nitride red micro-light emitting diodes for display applications

AU - Jain, Barsha

AU - Velpula, Ravi Teja

AU - Nguyen, H. P.T.

PY - 2021

Y1 - 2021

N2 - In this study, we report highly stable phosphor-free InGaN/AlGaN spontaneously formed core-shell nanowire red micro-light emitting diodes (μLEDs) with 30 × 30 μm2 mesa area directly grown on Si (111) substrates using molecular beam epitaxy.

AB - In this study, we report highly stable phosphor-free InGaN/AlGaN spontaneously formed core-shell nanowire red micro-light emitting diodes (μLEDs) with 30 × 30 μm2 mesa area directly grown on Si (111) substrates using molecular beam epitaxy.

UR - http://www.scopus.com/inward/record.url?scp=85120038295&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85120038295&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:85120038295

SN - 2162-2701

JO - Optics InfoBase Conference Papers

JF - Optics InfoBase Conference Papers

M1 - STu2C.1

T2 - CLEO: Science and Innovations, CLEO:S and I 2021 - Part of Conference on Lasers and Electro-Optics, CLEO 2021

Y2 - 9 May 2021 through 14 May 2021

ER -

Phosphor-free III-nitride red micro-light emitting diodes for display applications

Abstract

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this