Phosphor-free InGaN/GaN Dot-in-a-wire white light-emitting diodes on copper substrates

Hieu Pham Trung Nguyen, Qi Wang, Zetian Mi

Research output: Contribution to journalArticlepeer-review

19 Scopus citations


We have developed a novel substrate-transfer procedure for phosphor-free nanowire (NW) white light-emitting diodes (LEDs), wherein the NWs are grown directly on an SiO2 etch-stop layer. By applying this technique, InGaN/GaN NW LEDs were successfully transferred from SiO2/Si(100) substrates to copper substrates to reduce substrate absorption and improve heat dissipation. Compared with NW LEDs on Si, NW LEDs on copper substrates have several advantages, including enhanced output power and better current-voltage characteristics. We also show that white light emission by NW LEDs on copper substrates is highly stable.

Original languageEnglish (US)
Pages (from-to)868-872
Number of pages5
JournalJournal of Electronic Materials
Issue number4
StatePublished - Apr 2014
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


  • InGaN
  • Nanowire
  • light-emitting diodes
  • molecular beam epitaxy


Dive into the research topics of 'Phosphor-free InGaN/GaN Dot-in-a-wire white light-emitting diodes on copper substrates'. Together they form a unique fingerprint.

Cite this