Phosphor-free InGaN/GaN Dot-in-a-wire white light-emitting diodes on copper substrates

Hieu Pham Trung Nguyen; Qi Wang; Zetian Mi

doi:10.1007/s11664-014-3023-7

Phosphor-free InGaN/GaN Dot-in-a-wire white light-emitting diodes on copper substrates

Hieu Pham Trung Nguyen, Qi Wang, Zetian Mi

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

We have developed a novel substrate-transfer procedure for phosphor-free nanowire (NW) white light-emitting diodes (LEDs), wherein the NWs are grown directly on an SiO₂ etch-stop layer. By applying this technique, InGaN/GaN NW LEDs were successfully transferred from SiO₂/Si(100) substrates to copper substrates to reduce substrate absorption and improve heat dissipation. Compared with NW LEDs on Si, NW LEDs on copper substrates have several advantages, including enhanced output power and better current-voltage characteristics. We also show that white light emission by NW LEDs on copper substrates is highly stable.

Original language	English (US)
Pages (from-to)	868-872
Number of pages	5
Journal	Journal of Electronic Materials
Volume	43
Issue number	4
DOIs	https://doi.org/10.1007/s11664-014-3023-7
State	Published - Apr 2014
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Keywords

InGaN
Nanowire
light-emitting diodes
molecular beam epitaxy

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10.1007/s11664-014-3023-7

Cite this

@article{68e8f4a7b5bd4cb9bd51dca15f935a6a,

title = "Phosphor-free InGaN/GaN Dot-in-a-wire white light-emitting diodes on copper substrates",

abstract = "We have developed a novel substrate-transfer procedure for phosphor-free nanowire (NW) white light-emitting diodes (LEDs), wherein the NWs are grown directly on an SiO2 etch-stop layer. By applying this technique, InGaN/GaN NW LEDs were successfully transferred from SiO2/Si(100) substrates to copper substrates to reduce substrate absorption and improve heat dissipation. Compared with NW LEDs on Si, NW LEDs on copper substrates have several advantages, including enhanced output power and better current-voltage characteristics. We also show that white light emission by NW LEDs on copper substrates is highly stable.",

keywords = "InGaN, Nanowire, light-emitting diodes, molecular beam epitaxy",

author = "Nguyen, \{Hieu Pham Trung\} and Qi Wang and Zetian Mi",

note = "Funding Information: This work is supported by the Natural Sciences and Engineering Research Council of Canada (NSERC) and MDEIE—Programme de soutien {\`a} la valorization et au transfert. Part of the work was performed in the McGill University Micro Fabrication Facility.",

year = "2014",

month = apr,

doi = "10.1007/s11664-014-3023-7",

language = "English (US)",

volume = "43",

pages = "868--872",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "4",

}

TY - JOUR

T1 - Phosphor-free InGaN/GaN Dot-in-a-wire white light-emitting diodes on copper substrates

AU - Nguyen, Hieu Pham Trung

AU - Wang, Qi

AU - Mi, Zetian

N1 - Funding Information: This work is supported by the Natural Sciences and Engineering Research Council of Canada (NSERC) and MDEIE—Programme de soutien à la valorization et au transfert. Part of the work was performed in the McGill University Micro Fabrication Facility.

PY - 2014/4

Y1 - 2014/4

N2 - We have developed a novel substrate-transfer procedure for phosphor-free nanowire (NW) white light-emitting diodes (LEDs), wherein the NWs are grown directly on an SiO2 etch-stop layer. By applying this technique, InGaN/GaN NW LEDs were successfully transferred from SiO2/Si(100) substrates to copper substrates to reduce substrate absorption and improve heat dissipation. Compared with NW LEDs on Si, NW LEDs on copper substrates have several advantages, including enhanced output power and better current-voltage characteristics. We also show that white light emission by NW LEDs on copper substrates is highly stable.

AB - We have developed a novel substrate-transfer procedure for phosphor-free nanowire (NW) white light-emitting diodes (LEDs), wherein the NWs are grown directly on an SiO2 etch-stop layer. By applying this technique, InGaN/GaN NW LEDs were successfully transferred from SiO2/Si(100) substrates to copper substrates to reduce substrate absorption and improve heat dissipation. Compared with NW LEDs on Si, NW LEDs on copper substrates have several advantages, including enhanced output power and better current-voltage characteristics. We also show that white light emission by NW LEDs on copper substrates is highly stable.

KW - InGaN

KW - Nanowire

KW - light-emitting diodes

KW - molecular beam epitaxy

UR - https://www.scopus.com/pages/publications/84899105230

UR - https://www.scopus.com/inward/citedby.url?scp=84899105230&partnerID=8YFLogxK

U2 - 10.1007/s11664-014-3023-7

DO - 10.1007/s11664-014-3023-7

M3 - Article

AN - SCOPUS:84899105230

SN - 0361-5235

VL - 43

SP - 868

EP - 872

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 4

ER -

Phosphor-free InGaN/GaN Dot-in-a-wire white light-emitting diodes on copper substrates

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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