Phosphor-free InGaN/GaN/AlGaN core-shell dot-in-a-wire white light-emitting diodes

Zetian Mi, Hieu P.T. Nguyen, Shaofei Zhang, Ashfiqua T. Connie, Md G. Kibria, Qi Wang, Ishiang Shih

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have developed phosphor-free InGaN/GaN/AlGaN dot-in-a-wire core-shell white light emitting diodes, which can break the carrier injection efficiency bottleneck of conventional nanowire white light emitting diodes, leading to a dramatic enhancement of the output power. Additionally, such phosphor-free nanowire white light emitting diodes can deliver a very high color rendering index (CRI) of ∼92-98.

Original languageEnglish (US)
Title of host publicationLight-Emitting Diodes
Subtitle of host publicationMaterials, Devices, and Applications for Solid State Lighting XVIII
PublisherSPIE
ISBN (Print)9780819499165
DOIs
StatePublished - 2014
Externally publishedYes
EventLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII - San Francisco, CA, United States
Duration: Feb 4 2014Feb 6 2014

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9003
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII
CountryUnited States
CitySan Francisco, CA
Period2/4/142/6/14

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Keywords

  • gallium nitride
  • light emitting diodes
  • molecular beam epitaxy
  • nanowire

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