@inproceedings{e2c5786079b14a34864e0c4a6fc194a0,
title = "Phosphor-free InGaN/GaN/AlGaN core-shell dot-in-a-wire white light-emitting diodes",
abstract = "We have developed phosphor-free InGaN/GaN/AlGaN dot-in-a-wire core-shell white light emitting diodes, which can break the carrier injection efficiency bottleneck of conventional nanowire white light emitting diodes, leading to a dramatic enhancement of the output power. Additionally, such phosphor-free nanowire white light emitting diodes can deliver a very high color rendering index (CRI) of ∼92-98.",
keywords = "gallium nitride, light emitting diodes, molecular beam epitaxy, nanowire",
author = "Zetian Mi and Nguyen, {Hieu P.T.} and Shaofei Zhang and Connie, {Ashfiqua T.} and Kibria, {Md G.} and Qi Wang and Ishiang Shih",
year = "2014",
doi = "10.1117/12.2041284",
language = "English (US)",
isbn = "9780819499165",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
booktitle = "Light-Emitting Diodes",
address = "United States",
note = "Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII ; Conference date: 04-02-2014 Through 06-02-2014",
}