Phosphorus and Boron Implantation into (100) Germanium

Y. S. Suh; M. S. Carroll; R. A. Levy; A. Sahiner; C. A. King

doi:10.1557/proc-809-b8.11

Phosphorus and Boron Implantation into (100) Germanium

Y. S. Suh, M. S. Carroll, R. A. Levy, A. Sahiner, C. A. King

Physics

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

Boron and phosphorus were implanted into (100) Ge with energies ranging from 20-320 keV and doses of 5×10¹³ to 5×10¹⁶ cm^-2. The as-implanted and annealed dopant profiles were examined using secondary ion mass spectrometry (SIMS) and spreading resistance profiling (SRP). The first four moments were extracted from the as-implanted profile for modeling with Pearson distributions over the entire energy range. The samples were annealed at 400, 600, or 800°C in nitrogen ambient. The dopant activation and diffusion were also examined and it was found that p-type sheet resistances immediately after boron implantation as low as 18 ohms/sq could be obtained without subsequent annealing.

Original language	English (US)
Pages (from-to)	243-249
Number of pages	7
Journal	Materials Research Society Symposium Proceedings
Volume	809
DOIs	https://doi.org/10.1557/proc-809-b8.11
State	Published - 2004
Event	High-Mobility Group-IV Materials and Devices - San Francisco, CA, United States Duration: Apr 13 2004 → Apr 15 2004

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Phosphorus and Boron Implantation into (100) Germanium",

abstract = "Boron and phosphorus were implanted into (100) Ge with energies ranging from 20-320 keV and doses of 5×1013 to 5×1016 cm-2. The as-implanted and annealed dopant profiles were examined using secondary ion mass spectrometry (SIMS) and spreading resistance profiling (SRP). The first four moments were extracted from the as-implanted profile for modeling with Pearson distributions over the entire energy range. The samples were annealed at 400, 600, or 800°C in nitrogen ambient. The dopant activation and diffusion were also examined and it was found that p-type sheet resistances immediately after boron implantation as low as 18 ohms/sq could be obtained without subsequent annealing.",

author = "Suh, {Y. S.} and Carroll, {M. S.} and Levy, {R. A.} and A. Sahiner and King, {C. A.}",

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doi = "10.1557/proc-809-b8.11",

language = "English (US)",

volume = "809",

pages = "243--249",

journal = "Materials Research Society Symposium Proceedings",

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note = "High-Mobility Group-IV Materials and Devices ; Conference date: 13-04-2004 Through 15-04-2004",

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TY - JOUR

T1 - Phosphorus and Boron Implantation into (100) Germanium

AU - Suh, Y. S.

AU - Carroll, M. S.

AU - Levy, R. A.

AU - Sahiner, A.

AU - King, C. A.

PY - 2004

Y1 - 2004

N2 - Boron and phosphorus were implanted into (100) Ge with energies ranging from 20-320 keV and doses of 5×1013 to 5×1016 cm-2. The as-implanted and annealed dopant profiles were examined using secondary ion mass spectrometry (SIMS) and spreading resistance profiling (SRP). The first four moments were extracted from the as-implanted profile for modeling with Pearson distributions over the entire energy range. The samples were annealed at 400, 600, or 800°C in nitrogen ambient. The dopant activation and diffusion were also examined and it was found that p-type sheet resistances immediately after boron implantation as low as 18 ohms/sq could be obtained without subsequent annealing.

AB - Boron and phosphorus were implanted into (100) Ge with energies ranging from 20-320 keV and doses of 5×1013 to 5×1016 cm-2. The as-implanted and annealed dopant profiles were examined using secondary ion mass spectrometry (SIMS) and spreading resistance profiling (SRP). The first four moments were extracted from the as-implanted profile for modeling with Pearson distributions over the entire energy range. The samples were annealed at 400, 600, or 800°C in nitrogen ambient. The dopant activation and diffusion were also examined and it was found that p-type sheet resistances immediately after boron implantation as low as 18 ohms/sq could be obtained without subsequent annealing.

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DO - 10.1557/proc-809-b8.11

M3 - Conference article

AN - SCOPUS:12844275135

SN - 0272-9172

VL - 809

SP - 243

EP - 249

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - High-Mobility Group-IV Materials and Devices

Y2 - 13 April 2004 through 15 April 2004

ER -

Phosphorus and Boron Implantation into (100) Germanium

Abstract

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