Phosphorus and Boron Implantation into (100) Germanium

Y. S. Suh, M. S. Carroll, R. A. Levy, A. Sahiner, C. A. King

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations

Abstract

Boron and phosphorus were implanted into (100) Ge with energies ranging from 20-320 keV and doses of 5×1013 to 5×1016 cm-2. The as-implanted and annealed dopant profiles were examined using secondary ion mass spectrometry (SIMS) and spreading resistance profiling (SRP). The first four moments were extracted from the as-implanted profile for modeling with Pearson distributions over the entire energy range. The samples were annealed at 400, 600, or 800°C in nitrogen ambient. The dopant activation and diffusion were also examined and it was found that p-type sheet resistances immediately after boron implantation as low as 18 ohms/sq could be obtained without subsequent annealing.

Original languageEnglish (US)
Pages (from-to)243-249
Number of pages7
JournalMaterials Research Society Symposium Proceedings
Volume809
DOIs
StatePublished - Jan 1 2004
EventHigh-Mobility Group-IV Materials and Devices - San Francisco, CA, United States
Duration: Apr 13 2004Apr 15 2004

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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