Photoablation: Schottky barriers on patterned Si surfaces

Easy to make, patterned, Schottky barriers are investigated. In particular, the following aspects have been considered: the patterning technique, the electrical barrier height, and potential usage as solar cells. Patterning of the Si surfaces was achieved by photoablation process using an UV excimer laser in a presence of various solutions. Using a 5 mW red HeNe laser launched at various angles on the Si surface we have found that patterned solar cells ablated with 2:3:100 of HF:HNO₃:H₂O were as much as 23% more efficient than nonpatterned cells.