Photocarrier drift-mobility measurements and electron localization in nanoporous silicon

P. N. Rao, E. A. Schiff, L. Tsybeskov, P. Fauchet

Research output: Contribution to journalArticlepeer-review

20 Scopus citations


We report photocarrier time-of-flight measurements in diode structures made of highly porous crystalline silicon. The corresponding electron and hole drift mobilities are very small (<10-4 cm2/V s) compared to homogeneous crystalline silicon. The mobilities are dispersive (i.e., having a power-law decay with time or length-scale), but are only weakly temperature-dependent. The dispersion parameter lies in the range 0.55-0.65 for both electrons and holes. We conclude that the drift mobilities are limited by the nanoporous geometry, and not by disorder-induced localized states acting as traps. This conclusion is surprising in the context of luminescence models based on radiative recombination of localized excitons.

Original languageEnglish (US)
Pages (from-to)129-138
Number of pages10
JournalChemical Physics
Issue number1-2
StatePublished - Nov 1 2002
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy
  • Physical and Theoretical Chemistry


Dive into the research topics of 'Photocarrier drift-mobility measurements and electron localization in nanoporous silicon'. Together they form a unique fingerprint.

Cite this