Photoelectrochemical behavior of mixed ZnO and GaN (ZnO:GaN) thin films prepared by sputtering technique

Sudhakar Shet, Yanfa Yan, Nuggehalli Ravindra, John Turner, Mowafak Al-Jassim

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Mixed zinc oxide and gallium nitride (ZnO:GaN) thin films with significantly reduced bandgaps were synthesized by using zinc oxide and gallium nitride target at 100°C followed by post-deposition annealing at 500°C in ammonia for 4 h. All the films were synthesized by RF magnetron sputtering on Fluorine-doped tin oxide-coated glass. We found that mixed zinc oxide and gallium nitride (ZnO:GaN) thin films exhibited significantly reduced bandgap, as a result showed improved PEC response, compared to ZnO thin film. Furthermore, mixed zinc oxide and gallium nitride (ZnO:GaN) thin films with various bandgaps were realized by varying the O 2 mass flow rate in mixed O 2 and N 2 chamber ambient.

Original languageEnglish (US)
Pages (from-to)718-721
Number of pages4
JournalApplied Surface Science
Volume270
DOIs
StatePublished - Apr 1 2013

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Keywords

  • Ambient
  • Bandgap
  • GaN
  • Photoelectrochemical
  • Sputter
  • ZnO

Fingerprint Dive into the research topics of 'Photoelectrochemical behavior of mixed ZnO and GaN (ZnO:GaN) thin films prepared by sputtering technique'. Together they form a unique fingerprint.

Cite this