Photoelectrochemical behavior of mixed ZnO and GaN (ZnO:GaN) thin films prepared by sputtering technique

Sudhakar Shet; Yanfa Yan; Nuggehalli Ravindra; John Turner; Mowafak Al-Jassim

doi:10.1016/j.apsusc.2013.01.134

Photoelectrochemical behavior of mixed ZnO and GaN (ZnO:GaN) thin films prepared by sputtering technique

Sudhakar Shet, Yanfa Yan, Nuggehalli Ravindra, John Turner, Mowafak Al-Jassim

Physics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Mixed zinc oxide and gallium nitride (ZnO:GaN) thin films with significantly reduced bandgaps were synthesized by using zinc oxide and gallium nitride target at 100°C followed by post-deposition annealing at 500°C in ammonia for 4 h. All the films were synthesized by RF magnetron sputtering on Fluorine-doped tin oxide-coated glass. We found that mixed zinc oxide and gallium nitride (ZnO:GaN) thin films exhibited significantly reduced bandgap, as a result showed improved PEC response, compared to ZnO thin film. Furthermore, mixed zinc oxide and gallium nitride (ZnO:GaN) thin films with various bandgaps were realized by varying the O ₂ mass flow rate in mixed O ₂ and N ₂ chamber ambient.

Original language	English (US)
Pages (from-to)	718-721
Number of pages	4
Journal	Applied Surface Science
Volume	270
DOIs	https://doi.org/10.1016/j.apsusc.2013.01.134
State	Published - Apr 1 2013

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
General Physics and Astronomy
Surfaces and Interfaces
Surfaces, Coatings and Films

Keywords

Ambient
Bandgap
GaN
Photoelectrochemical
Sputter
ZnO

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10.1016/j.apsusc.2013.01.134

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title = "Photoelectrochemical behavior of mixed ZnO and GaN (ZnO:GaN) thin films prepared by sputtering technique",

abstract = " Mixed zinc oxide and gallium nitride (ZnO:GaN) thin films with significantly reduced bandgaps were synthesized by using zinc oxide and gallium nitride target at 100°C followed by post-deposition annealing at 500°C in ammonia for 4 h. All the films were synthesized by RF magnetron sputtering on Fluorine-doped tin oxide-coated glass. We found that mixed zinc oxide and gallium nitride (ZnO:GaN) thin films exhibited significantly reduced bandgap, as a result showed improved PEC response, compared to ZnO thin film. Furthermore, mixed zinc oxide and gallium nitride (ZnO:GaN) thin films with various bandgaps were realized by varying the O 2 mass flow rate in mixed O 2 and N 2 chamber ambient.",

keywords = "Ambient, Bandgap, GaN, Photoelectrochemical, Sputter, ZnO",

author = "Sudhakar Shet and Yanfa Yan and Nuggehalli Ravindra and John Turner and Mowafak Al-Jassim",

note = "Funding Information: This work was supported by the U.S. Department of Energy under Contract # DE-AC36-08GO28308 .",

year = "2013",

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doi = "10.1016/j.apsusc.2013.01.134",

language = "English (US)",

volume = "270",

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journal = "Applied Surface Science",

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T1 - Photoelectrochemical behavior of mixed ZnO and GaN (ZnO:GaN) thin films prepared by sputtering technique

AU - Shet, Sudhakar

AU - Yan, Yanfa

AU - Ravindra, Nuggehalli

AU - Turner, John

AU - Al-Jassim, Mowafak

N1 - Funding Information: This work was supported by the U.S. Department of Energy under Contract # DE-AC36-08GO28308 .

PY - 2013/4/1

Y1 - 2013/4/1

N2 - Mixed zinc oxide and gallium nitride (ZnO:GaN) thin films with significantly reduced bandgaps were synthesized by using zinc oxide and gallium nitride target at 100°C followed by post-deposition annealing at 500°C in ammonia for 4 h. All the films were synthesized by RF magnetron sputtering on Fluorine-doped tin oxide-coated glass. We found that mixed zinc oxide and gallium nitride (ZnO:GaN) thin films exhibited significantly reduced bandgap, as a result showed improved PEC response, compared to ZnO thin film. Furthermore, mixed zinc oxide and gallium nitride (ZnO:GaN) thin films with various bandgaps were realized by varying the O 2 mass flow rate in mixed O 2 and N 2 chamber ambient.

AB - Mixed zinc oxide and gallium nitride (ZnO:GaN) thin films with significantly reduced bandgaps were synthesized by using zinc oxide and gallium nitride target at 100°C followed by post-deposition annealing at 500°C in ammonia for 4 h. All the films were synthesized by RF magnetron sputtering on Fluorine-doped tin oxide-coated glass. We found that mixed zinc oxide and gallium nitride (ZnO:GaN) thin films exhibited significantly reduced bandgap, as a result showed improved PEC response, compared to ZnO thin film. Furthermore, mixed zinc oxide and gallium nitride (ZnO:GaN) thin films with various bandgaps were realized by varying the O 2 mass flow rate in mixed O 2 and N 2 chamber ambient.

KW - Ambient

KW - Bandgap

KW - GaN

KW - Photoelectrochemical

KW - Sputter

KW - ZnO

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JO - Applied Surface Science

JF - Applied Surface Science

ER -

Photoelectrochemical behavior of mixed ZnO and GaN (ZnO:GaN) thin films prepared by sputtering technique

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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