Mixed zinc oxide and gallium nitride (ZnO:GaN) thin films with significantly reduced bandgaps were synthesized by using zinc oxide and gallium nitride target at 100°C followed by post-deposition annealing at 500°C in ammonia for 4 h. All the films were synthesized by RF magnetron sputtering on Fluorine-doped tin oxide-coated glass. We found that mixed zinc oxide and gallium nitride (ZnO:GaN) thin films exhibited significantly reduced bandgap, as a result showed improved PEC response, compared to ZnO thin film. Furthermore, mixed zinc oxide and gallium nitride (ZnO:GaN) thin films with various bandgaps were realized by varying the O 2 mass flow rate in mixed O 2 and N 2 chamber ambient.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films