Abstract
The laser-induced photoelectrochemical etching of n-InP using a thin-film cell has been studied. A minimum in the reaction time was found as a function of etchant concentration for a given laser intensity. External potential biasing enhanced the reaction only for relatively low etchant concentrations.
Original language | English (US) |
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Pages (from-to) | 2655-2657 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 55 |
Issue number | 25 |
DOIs | |
State | Published - 1989 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)