Photoelectrochemical etching of n-InP in a thin-film cell

H. Grebel, B. Iskandar, K. G. Sheppard

Research output: Contribution to journalArticlepeer-review

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The laser-induced photoelectrochemical etching of n-InP using a thin-film cell has been studied. A minimum in the reaction time was found as a function of etchant concentration for a given laser intensity. External potential biasing enhanced the reaction only for relatively low etchant concentrations.

Original languageEnglish (US)
Pages (from-to)2655-2657
Number of pages3
JournalApplied Physics Letters
Issue number25
StatePublished - 1989

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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