Photolithographic patterning of porous silicon using silicon nitride and silicon carbide masks

H. Wang; B. Welker; Y. Gao; J. F. Federici; R. A. Levy

doi:10.1016/0167-577X(95)00050-X

Photolithographic patterning of porous silicon using silicon nitride and silicon carbide masks

H. Wang, B. Welker, Y. Gao, J. F. Federici, R. A. Levy

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

In this study, a two-step photolithographic process for selective formation of porous silicon is described. The process utilizes coatings of silicon nitride or silicon carbide on silicon. These films are impervious to the HF solution during anodic etching in an ambient environment. However, when the coated wafer is illuminated during anodization, microcracks are produced in the illuminated regions. Creation of these microcracks results in formation of porous silicon in the underlying regions. The patterning of 100 μm features is deemed possible with this technology.

Original language	English (US)
Pages (from-to)	209-214
Number of pages	6
Journal	Materials Letters
Volume	23
Issue number	4-6
DOIs	https://doi.org/10.1016/0167-577X(95)00050-X
State	Published - May 1995

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Photolithographic patterning of porous silicon using silicon nitride and silicon carbide masks",

abstract = "In this study, a two-step photolithographic process for selective formation of porous silicon is described. The process utilizes coatings of silicon nitride or silicon carbide on silicon. These films are impervious to the HF solution during anodic etching in an ambient environment. However, when the coated wafer is illuminated during anodization, microcracks are produced in the illuminated regions. Creation of these microcracks results in formation of porous silicon in the underlying regions. The patterning of 100 μm features is deemed possible with this technology.",

author = "H. Wang and B. Welker and Y. Gao and Federici, {J. F.} and Levy, {R. A.}",

note = "Funding Information: Helpful discussions with F? Fauchet and J. van Behren are acknowledged.T his work was supported by the New Jersey Space Grant Consortium and by the Center for Manufacturing Systems (CMS) at NJIT. CMS is an Advanced Technology Center of the New Jersey Commission on Science and Technology.",

year = "1995",

month = may,

doi = "10.1016/0167-577X(95)00050-X",

language = "English (US)",

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pages = "209--214",

journal = "Materials Letters",

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publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Photolithographic patterning of porous silicon using silicon nitride and silicon carbide masks

AU - Wang, H.

AU - Welker, B.

AU - Gao, Y.

AU - Federici, J. F.

AU - Levy, R. A.

N1 - Funding Information: Helpful discussions with F? Fauchet and J. van Behren are acknowledged.T his work was supported by the New Jersey Space Grant Consortium and by the Center for Manufacturing Systems (CMS) at NJIT. CMS is an Advanced Technology Center of the New Jersey Commission on Science and Technology.

PY - 1995/5

Y1 - 1995/5

N2 - In this study, a two-step photolithographic process for selective formation of porous silicon is described. The process utilizes coatings of silicon nitride or silicon carbide on silicon. These films are impervious to the HF solution during anodic etching in an ambient environment. However, when the coated wafer is illuminated during anodization, microcracks are produced in the illuminated regions. Creation of these microcracks results in formation of porous silicon in the underlying regions. The patterning of 100 μm features is deemed possible with this technology.

AB - In this study, a two-step photolithographic process for selective formation of porous silicon is described. The process utilizes coatings of silicon nitride or silicon carbide on silicon. These films are impervious to the HF solution during anodic etching in an ambient environment. However, when the coated wafer is illuminated during anodization, microcracks are produced in the illuminated regions. Creation of these microcracks results in formation of porous silicon in the underlying regions. The patterning of 100 μm features is deemed possible with this technology.

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EP - 214

JO - Materials Letters

JF - Materials Letters

IS - 4-6

ER -

Photolithographic patterning of porous silicon using silicon nitride and silicon carbide masks

Abstract

All Science Journal Classification (ASJC) codes

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