Photolithographic patterning of porous silicon using silicon nitride and silicon carbide masks

H. Wang, B. Welker, Y. Gao, J. F. Federici, R. A. Levy

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

In this study, a two-step photolithographic process for selective formation of porous silicon is described. The process utilizes coatings of silicon nitride or silicon carbide on silicon. These films are impervious to the HF solution during anodic etching in an ambient environment. However, when the coated wafer is illuminated during anodization, microcracks are produced in the illuminated regions. Creation of these microcracks results in formation of porous silicon in the underlying regions. The patterning of 100 μm features is deemed possible with this technology.

Original languageEnglish (US)
Pages (from-to)209-214
Number of pages6
JournalMaterials Letters
Volume23
Issue number4-6
DOIs
StatePublished - May 1995

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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