Photoluminescence and electroluminescence in partially oxidized porous silicon

L. Tsybeskov; S. P. Duttagupta; P. M. Fauchet

doi:10.1016/0038-1098(95)00294-4

Photoluminescence and electroluminescence in partially oxidized porous silicon

L. Tsybeskov, S. P. Duttagupta, P. M. Fauchet

Research output: Contribution to journal › Article › peer-review

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Abstract

The results of photoluminescence (PL) and electroluminescence (EL) studies from partially oxidized porous silicon (POPS) layers are presented. The PL from POPS is stable, peaks at 600-570 nm and its temperature dependence can be fitted by an exponential law with an activation energy E_a ≈ 10 meV. The current-voltage characteristics of Au-(POPS)-crystalline silicon (c-Si) structures follow a power law I ≈ Vⁿ. When the index n becomes higher than 2, electroluminescence (EL) is found. The EL peaks at 760 nm and is stable for more than 100 hours of operation. The intensity of the EL is a linear function of current for all measured structures up to current density J ≈ 1 A/cm². Our results suggest that partiálly oxidized porous silicon is more useful for device applications than freshly anodized porous silicon which has unstable properties or than fully oxidized porous silicon in which transport is poor.

Original language	English (US)
Pages (from-to)	429-433
Number of pages	5
Journal	Solid State Communications
Volume	95
Issue number	7
DOIs	https://doi.org/10.1016/0038-1098(95)00294-4
State	Published - Aug 1995
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(95)00294-4

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@article{d73ad7d224fa48e494800cac3e05555c,

title = "Photoluminescence and electroluminescence in partially oxidized porous silicon",

abstract = "The results of photoluminescence (PL) and electroluminescence (EL) studies from partially oxidized porous silicon (POPS) layers are presented. The PL from POPS is stable, peaks at 600-570 nm and its temperature dependence can be fitted by an exponential law with an activation energy Ea ≈ 10 meV. The current-voltage characteristics of Au-(POPS)-crystalline silicon (c-Si) structures follow a power law I ≈ Vn. When the index n becomes higher than 2, electroluminescence (EL) is found. The EL peaks at 760 nm and is stable for more than 100 hours of operation. The intensity of the EL is a linear function of current for all measured structures up to current density J ≈ 1 A/cm2. Our results suggest that parti{\'a}lly oxidized porous silicon is more useful for device applications than freshly anodized porous silicon which has unstable properties or than fully oxidized porous silicon in which transport is poor.",

author = "L. Tsybeskov and Duttagupta, {S. P.} and Fauchet, {P. M.}",

note = "Funding Information: This work was supportedin partb y RochesteGr as & Electric, the New York State Energy Research& DevelopmenAtu thoritya ndX erox.",

year = "1995",

month = aug,

doi = "10.1016/0038-1098(95)00294-4",

language = "English (US)",

volume = "95",

pages = "429--433",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "7",

}

TY - JOUR

T1 - Photoluminescence and electroluminescence in partially oxidized porous silicon

AU - Tsybeskov, L.

AU - Duttagupta, S. P.

AU - Fauchet, P. M.

N1 - Funding Information: This work was supportedin partb y RochesteGr as & Electric, the New York State Energy Research& DevelopmenAtu thoritya ndX erox.

PY - 1995/8

Y1 - 1995/8

N2 - The results of photoluminescence (PL) and electroluminescence (EL) studies from partially oxidized porous silicon (POPS) layers are presented. The PL from POPS is stable, peaks at 600-570 nm and its temperature dependence can be fitted by an exponential law with an activation energy Ea ≈ 10 meV. The current-voltage characteristics of Au-(POPS)-crystalline silicon (c-Si) structures follow a power law I ≈ Vn. When the index n becomes higher than 2, electroluminescence (EL) is found. The EL peaks at 760 nm and is stable for more than 100 hours of operation. The intensity of the EL is a linear function of current for all measured structures up to current density J ≈ 1 A/cm2. Our results suggest that partiálly oxidized porous silicon is more useful for device applications than freshly anodized porous silicon which has unstable properties or than fully oxidized porous silicon in which transport is poor.

AB - The results of photoluminescence (PL) and electroluminescence (EL) studies from partially oxidized porous silicon (POPS) layers are presented. The PL from POPS is stable, peaks at 600-570 nm and its temperature dependence can be fitted by an exponential law with an activation energy Ea ≈ 10 meV. The current-voltage characteristics of Au-(POPS)-crystalline silicon (c-Si) structures follow a power law I ≈ Vn. When the index n becomes higher than 2, electroluminescence (EL) is found. The EL peaks at 760 nm and is stable for more than 100 hours of operation. The intensity of the EL is a linear function of current for all measured structures up to current density J ≈ 1 A/cm2. Our results suggest that partiálly oxidized porous silicon is more useful for device applications than freshly anodized porous silicon which has unstable properties or than fully oxidized porous silicon in which transport is poor.

UR - http://www.scopus.com/inward/record.url?scp=0029357693&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029357693&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(95)00294-4

DO - 10.1016/0038-1098(95)00294-4

M3 - Article

AN - SCOPUS:0029357693

SN - 0038-1098

VL - 95

SP - 429

EP - 433

JO - Solid State Communications

JF - Solid State Communications

IS - 7

ER -

Photoluminescence and electroluminescence in partially oxidized porous silicon

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