In crystalline, dislocation-free, Si/Ge nanowire axial heterojunctions grown using the vapor-liquid-solid technique, photoluminescence and Raman spectroscopy reveal a SiGe alloy transition layer with preferential chemical composition and strain. In addition to the lattice mismatch, strain in Si/Ge nanowires is observed from a temperature dependent study to be affected by the difference in Si and Ge thermal expansion. The conclusions are supported by analytical transmission electron microscopy measurements.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - 2009|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)