Photoluminescence and Raman scattering in axial Si/Ge nanowire heterojunctions

H. Y. Chang; L. Tsybeskov; S. Sharma; T. I. Kamins; X. Wu; D. J. Lockwood

doi:10.1063/1.3240595

Photoluminescence and Raman scattering in axial Si/Ge nanowire heterojunctions

H. Y. Chang, L. Tsybeskov, S. Sharma, T. I. Kamins, X. Wu, D. J. Lockwood

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

In crystalline, dislocation-free, Si/Ge nanowire axial heterojunctions grown using the vapor-liquid-solid technique, photoluminescence and Raman spectroscopy reveal a SiGe alloy transition layer with preferential chemical composition and strain. In addition to the lattice mismatch, strain in Si/Ge nanowires is observed from a temperature dependent study to be affected by the difference in Si and Ge thermal expansion. The conclusions are supported by analytical transmission electron microscopy measurements.

Original language	English (US)
Article number	133120
Journal	Applied Physics Letters
Volume	95
Issue number	13
DOIs	https://doi.org/10.1063/1.3240595
State	Published - 2009

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3240595

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@article{5848955a323f4e869afbe1d04a31bbe6,

title = "Photoluminescence and Raman scattering in axial Si/Ge nanowire heterojunctions",

abstract = "In crystalline, dislocation-free, Si/Ge nanowire axial heterojunctions grown using the vapor-liquid-solid technique, photoluminescence and Raman spectroscopy reveal a SiGe alloy transition layer with preferential chemical composition and strain. In addition to the lattice mismatch, strain in Si/Ge nanowires is observed from a temperature dependent study to be affected by the difference in Si and Ge thermal expansion. The conclusions are supported by analytical transmission electron microscopy measurements.",

author = "Chang, {H. Y.} and L. Tsybeskov and S. Sharma and Kamins, {T. I.} and X. Wu and Lockwood, {D. J.}",

note = "Funding Information: The work at NJIT is supported in part by National Science Foundation ECCS-0725443, U. S. Army Research Office W911F-09–1–01–89, and Foundation at NJIT. The samples were grown at Hewlett-Packard Laboratories. We thank G. Parent for TEM sample preparation and J.W. Fraser for scanning electron microscopy measurements. ",

year = "2009",

doi = "10.1063/1.3240595",

language = "English (US)",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "13",

}

TY - JOUR

T1 - Photoluminescence and Raman scattering in axial Si/Ge nanowire heterojunctions

AU - Chang, H. Y.

AU - Tsybeskov, L.

AU - Sharma, S.

AU - Kamins, T. I.

AU - Wu, X.

AU - Lockwood, D. J.

N1 - Funding Information: The work at NJIT is supported in part by National Science Foundation ECCS-0725443, U. S. Army Research Office W911F-09–1–01–89, and Foundation at NJIT. The samples were grown at Hewlett-Packard Laboratories. We thank G. Parent for TEM sample preparation and J.W. Fraser for scanning electron microscopy measurements.

PY - 2009

Y1 - 2009

N2 - In crystalline, dislocation-free, Si/Ge nanowire axial heterojunctions grown using the vapor-liquid-solid technique, photoluminescence and Raman spectroscopy reveal a SiGe alloy transition layer with preferential chemical composition and strain. In addition to the lattice mismatch, strain in Si/Ge nanowires is observed from a temperature dependent study to be affected by the difference in Si and Ge thermal expansion. The conclusions are supported by analytical transmission electron microscopy measurements.

AB - In crystalline, dislocation-free, Si/Ge nanowire axial heterojunctions grown using the vapor-liquid-solid technique, photoluminescence and Raman spectroscopy reveal a SiGe alloy transition layer with preferential chemical composition and strain. In addition to the lattice mismatch, strain in Si/Ge nanowires is observed from a temperature dependent study to be affected by the difference in Si and Ge thermal expansion. The conclusions are supported by analytical transmission electron microscopy measurements.

UR - http://www.scopus.com/inward/record.url?scp=70349665210&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70349665210&partnerID=8YFLogxK

U2 - 10.1063/1.3240595

DO - 10.1063/1.3240595

M3 - Article

AN - SCOPUS:70349665210

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 133120

ER -

Photoluminescence and Raman scattering in axial Si/Ge nanowire heterojunctions

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