Photoluminescence and Raman scattering in three-dimensional Si/Si 1-xGe x nanostructures

B. V. Kamenev, L. Tsybeskov, J. M. Baribeau, D. J. Lockwood

Research output: Contribution to journalArticlepeer-review

50 Scopus citations

Abstract

Raman and photoluminescence measurements in Si/Si 1-xGe x nanostructures grown by molecular-beam epitaxy under conditions close to Stranski-Krastanov growth mode, were presented. Raman spectra were collected at room temperature in a backscattering geometry using Ar + laser as the excitation source. It was found that, a Ge concentration of higher than 50% induced Ge segregation in the form of Ge-core/SiGe shell nanoclusters. The results indicate that better control over Ge segregation in three dimensional Si/SiGe nanostructures may result in optoelectronic devices compatible with CMOS technology.

Original languageEnglish (US)
Pages (from-to)1293-1295
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number8
DOIs
StatePublished - Feb 23 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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