Photoluminescence fatigue in three-dimensional silicon/silicon-germanium nanostructures

N. Modi; L. Tsybeskov; J. M. Baribeau; X. Wu; D. J. Lockwood

doi:10.1063/1.3698303

Photoluminescence fatigue in three-dimensional silicon/silicon-germanium nanostructures

N. Modi, L. Tsybeskov, J. M. Baribeau, X. Wu, D. J. Lockwood

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We find fatigue of low temperature photoluminescence (PL) in Si/SiGe three-dimensional island morphology nanostructures under continuous excitation. Initially, the PL intensity slowly decreases by less than 15, and after ∼10 min it decreases rapidly by more than 80. After the PL intensity stabilizes, a complete recovery requires heating the sample to nearly room temperature. We propose that accumulation of charge within SiGe islands is responsible for the enhancement of Auger recombination and hence the observed PL fatigue.

Original language	English (US)
Article number	064318
Journal	Journal of Applied Physics
Volume	111
Issue number	6
DOIs	https://doi.org/10.1063/1.3698303
State	Published - Mar 15 2012

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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title = "Photoluminescence fatigue in three-dimensional silicon/silicon-germanium nanostructures",

abstract = "We find fatigue of low temperature photoluminescence (PL) in Si/SiGe three-dimensional island morphology nanostructures under continuous excitation. Initially, the PL intensity slowly decreases by less than 15, and after ∼10 min it decreases rapidly by more than 80. After the PL intensity stabilizes, a complete recovery requires heating the sample to nearly room temperature. We propose that accumulation of charge within SiGe islands is responsible for the enhancement of Auger recombination and hence the observed PL fatigue.",

author = "N. Modi and L. Tsybeskov and Baribeau, {J. M.} and X. Wu and Lockwood, {D. J.}",

note = "Funding Information: We thank G. Parent for TEM sample preparation. This work is supported by the National Science Foundation, Hewlett-Packard Research Laboratories Open Innovation Program and Foundation at NJIT.",

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doi = "10.1063/1.3698303",

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AU - Modi, N.

AU - Tsybeskov, L.

AU - Baribeau, J. M.

AU - Wu, X.

AU - Lockwood, D. J.

N1 - Funding Information: We thank G. Parent for TEM sample preparation. This work is supported by the National Science Foundation, Hewlett-Packard Research Laboratories Open Innovation Program and Foundation at NJIT.

PY - 2012/3/15

Y1 - 2012/3/15

N2 - We find fatigue of low temperature photoluminescence (PL) in Si/SiGe three-dimensional island morphology nanostructures under continuous excitation. Initially, the PL intensity slowly decreases by less than 15, and after ∼10 min it decreases rapidly by more than 80. After the PL intensity stabilizes, a complete recovery requires heating the sample to nearly room temperature. We propose that accumulation of charge within SiGe islands is responsible for the enhancement of Auger recombination and hence the observed PL fatigue.

AB - We find fatigue of low temperature photoluminescence (PL) in Si/SiGe three-dimensional island morphology nanostructures under continuous excitation. Initially, the PL intensity slowly decreases by less than 15, and after ∼10 min it decreases rapidly by more than 80. After the PL intensity stabilizes, a complete recovery requires heating the sample to nearly room temperature. We propose that accumulation of charge within SiGe islands is responsible for the enhancement of Auger recombination and hence the observed PL fatigue.

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JF - Journal of Applied Physics

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ER -

Photoluminescence fatigue in three-dimensional silicon/silicon-germanium nanostructures

Abstract

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