Photoluminescence thermal quenching in three-dimensional multilayer SiSiGe nanostructures

E. K. Lee, L. Tsybeskov, T. I. Kamins

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


We find that in SiSiGe three-dimensional multilayer nanostructures, photoluminescence intensity as a function of temperature depends on the excitation intensity. The experimental results are explained using a model where electron-hole separation and nonradiative recombination is controlled by a competition between hole tunneling and thermally activated hole diffusion over the valence band energy barriers at SiSiGe heterointerfaces.

Original languageEnglish (US)
Article number033110
JournalApplied Physics Letters
Issue number3
StatePublished - 2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Photoluminescence thermal quenching in three-dimensional multilayer SiSiGe nanostructures'. Together they form a unique fingerprint.

Cite this