Photoluminescence thermal quenching in three-dimensional multilayer SiSiGe nanostructures

E. K. Lee, L. Tsybeskov, T. I. Kamins

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

We find that in SiSiGe three-dimensional multilayer nanostructures, photoluminescence intensity as a function of temperature depends on the excitation intensity. The experimental results are explained using a model where electron-hole separation and nonradiative recombination is controlled by a competition between hole tunneling and thermally activated hole diffusion over the valence band energy barriers at SiSiGe heterointerfaces.

Original languageEnglish (US)
Article number033110
JournalApplied Physics Letters
Volume92
Issue number3
DOIs
StatePublished - 2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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