Photoluminescence thermal quenching in three-dimensional multilayer SiSiGe nanostructures

E. K. Lee; L. Tsybeskov; T. I. Kamins

doi:10.1063/1.2837184

Photoluminescence thermal quenching in three-dimensional multilayer SiSiGe nanostructures

E. K. Lee
, L. Tsybeskov
, T. I. Kamins

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We find that in SiSiGe three-dimensional multilayer nanostructures, photoluminescence intensity as a function of temperature depends on the excitation intensity. The experimental results are explained using a model where electron-hole separation and nonradiative recombination is controlled by a competition between hole tunneling and thermally activated hole diffusion over the valence band energy barriers at SiSiGe heterointerfaces.

Original language	English (US)
Article number	033110
Journal	Applied Physics Letters
Volume	92
Issue number	3
DOIs	https://doi.org/10.1063/1.2837184
State	Published - 2008

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2837184

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title = "Photoluminescence thermal quenching in three-dimensional multilayer SiSiGe nanostructures",

abstract = "We find that in SiSiGe three-dimensional multilayer nanostructures, photoluminescence intensity as a function of temperature depends on the excitation intensity. The experimental results are explained using a model where electron-hole separation and nonradiative recombination is controlled by a competition between hole tunneling and thermally activated hole diffusion over the valence band energy barriers at SiSiGe heterointerfaces.",

author = "Lee, \{E. K.\} and L. Tsybeskov and Kamins, \{T. I.\}",

note = "Funding Information: This work is supported in part by Intel Corp., the U. S. National Science Foundation, Foundation at NJIT, and Hewlett-Packard. ",

year = "2008",

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language = "English (US)",

volume = "92",

journal = "Applied Physics Letters",

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T1 - Photoluminescence thermal quenching in three-dimensional multilayer SiSiGe nanostructures

AU - Lee, E. K.

AU - Tsybeskov, L.

AU - Kamins, T. I.

N1 - Funding Information: This work is supported in part by Intel Corp., the U. S. National Science Foundation, Foundation at NJIT, and Hewlett-Packard.

PY - 2008

Y1 - 2008

N2 - We find that in SiSiGe three-dimensional multilayer nanostructures, photoluminescence intensity as a function of temperature depends on the excitation intensity. The experimental results are explained using a model where electron-hole separation and nonradiative recombination is controlled by a competition between hole tunneling and thermally activated hole diffusion over the valence band energy barriers at SiSiGe heterointerfaces.

AB - We find that in SiSiGe three-dimensional multilayer nanostructures, photoluminescence intensity as a function of temperature depends on the excitation intensity. The experimental results are explained using a model where electron-hole separation and nonradiative recombination is controlled by a competition between hole tunneling and thermally activated hole diffusion over the valence band energy barriers at SiSiGe heterointerfaces.

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UR - https://www.scopus.com/pages/publications/38549154447#tab=citedBy

U2 - 10.1063/1.2837184

DO - 10.1063/1.2837184

M3 - Article

AN - SCOPUS:38549154447

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 033110

ER -

Photoluminescence thermal quenching in three-dimensional multilayer SiSiGe nanostructures

Abstract

All Science Journal Classification (ASJC) codes

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