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Photoluminescence thermal quenching in three-dimensional multilayer SiSiGe nanostructures
E. K. Lee
,
L. Tsybeskov
, T. I. Kamins
Electrical and Computer Engineering
Research output
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Contribution to journal
›
Article
›
peer-review
14
Scopus citations
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Dive into the research topics of 'Photoluminescence thermal quenching in three-dimensional multilayer SiSiGe nanostructures'. Together they form a unique fingerprint.
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Keyphrases
Nanostructures
100%
Three-dimensional (3D)
100%
Photoluminescence
100%
Thermal Quenching
100%
Heterointerface
50%
Valence Band
50%
Energy Barrier
50%
Nonradiative Recombination
50%
Photoluminescence Intensity
50%
Excitation Intensity
50%
Hole Tunneling
50%
Thermally Activated Processes
50%
Band Energy
50%
Multi-layered Nanostructures
50%
Electron-hole Separation
50%
Hole Diffusion
50%
Engineering
Experimental Result
100%
Tunnel Construction
100%
Energy Barrier
100%
Valence Band
100%
Quenching
100%
Material Science
Nanocrystalline Material
100%
Photoluminescence
100%