Photoluminescence upconversion study of GaN nanowires: Potential for optical refrigeration

Ruolin Chen, Guan Sun, Yujie J. Ding, Hieu P.T. Nguyen, Zetian Mi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Up-converted photoluminescence of GaN nanowires is observed at the temperature above 375 K. At 475 K, the mechanism of the photoluminescence was identified as phonon-assisted bandtail emission. Such a phenomenon contributes to optical refrigeration.

Original languageEnglish (US)
Title of host publication2015 Conference on Lasers and Electro-Optics, CLEO 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781557529688
StatePublished - Aug 10 2015
Externally publishedYes
EventConference on Lasers and Electro-Optics, CLEO 2015 - San Jose, United States
Duration: May 10 2015May 15 2015

Publication series

NameConference on Lasers and Electro-Optics Europe - Technical Digest
Volume2015-August

Other

OtherConference on Lasers and Electro-Optics, CLEO 2015
Country/TerritoryUnited States
CitySan Jose
Period5/10/155/15/15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Keywords

  • Cooling
  • Gallium nitride
  • Laser excitation
  • Nanowires
  • Phonons
  • Photoluminescence
  • Plasma temperature

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