Abstract
Memristive devices are leading candidates for realizing next generation non-volatile memory [1] and brain-inspired neuromorphic computing systems [2]. However, most of these devices operate at high voltages (1-3 V) and require 100s of μA for programming. We recently demonstrated a Cu/SiO2/W memristor device, exhibiting half-integer quantum conductance states at room temperature and sub-300 mV switching [3]. In this paper we develop a physics based model for this device, capturing the observed experimental programming characteristics including its switching response, conductance quantization, and pulse response.
Original language | English (US) |
---|---|
Title of host publication | 74th Annual Device Research Conference, DRC 2016 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Volume | 2016-August |
ISBN (Electronic) | 9781509028276 |
DOIs | |
State | Published - Aug 22 2016 |
Event | 74th Annual Device Research Conference, DRC 2016 - Newark, United States Duration: Jun 19 2016 → Jun 22 2016 |
Other
Other | 74th Annual Device Research Conference, DRC 2016 |
---|---|
Country/Territory | United States |
City | Newark |
Period | 6/19/16 → 6/22/16 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering