Physics-based switching model for Cu/SiO2/W quantum memristor

S. R. Nandakumar, Bipin Rajendran

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Memristive devices are leading candidates for realizing next generation non-volatile memory [1] and brain-inspired neuromorphic computing systems [2]. However, most of these devices operate at high voltages (1-3 V) and require 100s of μA for programming. We recently demonstrated a Cu/SiO2/W memristor device, exhibiting half-integer quantum conductance states at room temperature and sub-300 mV switching [3]. In this paper we develop a physics based model for this device, capturing the observed experimental programming characteristics including its switching response, conductance quantization, and pulse response.

Original languageEnglish (US)
Title of host publication74th Annual Device Research Conference, DRC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Volume2016-August
ISBN (Electronic)9781509028276
DOIs
StatePublished - Aug 22 2016
Event74th Annual Device Research Conference, DRC 2016 - Newark, United States
Duration: Jun 19 2016Jun 22 2016

Other

Other74th Annual Device Research Conference, DRC 2016
CountryUnited States
CityNewark
Period6/19/166/22/16

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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