TY - GEN
T1 - Physics-based switching model for Cu/SiO2/W quantum memristor
AU - Nandakumar, S. R.
AU - Rajendran, Bipin
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/8/22
Y1 - 2016/8/22
N2 - Memristive devices are leading candidates for realizing next generation non-volatile memory [1] and brain-inspired neuromorphic computing systems [2]. However, most of these devices operate at high voltages (1-3 V) and require 100s of μA for programming. We recently demonstrated a Cu/SiO2/W memristor device, exhibiting half-integer quantum conductance states at room temperature and sub-300 mV switching [3]. In this paper we develop a physics based model for this device, capturing the observed experimental programming characteristics including its switching response, conductance quantization, and pulse response.
AB - Memristive devices are leading candidates for realizing next generation non-volatile memory [1] and brain-inspired neuromorphic computing systems [2]. However, most of these devices operate at high voltages (1-3 V) and require 100s of μA for programming. We recently demonstrated a Cu/SiO2/W memristor device, exhibiting half-integer quantum conductance states at room temperature and sub-300 mV switching [3]. In this paper we develop a physics based model for this device, capturing the observed experimental programming characteristics including its switching response, conductance quantization, and pulse response.
UR - http://www.scopus.com/inward/record.url?scp=84987735517&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84987735517&partnerID=8YFLogxK
U2 - 10.1109/DRC.2016.7548509
DO - 10.1109/DRC.2016.7548509
M3 - Conference contribution
AN - SCOPUS:84987735517
T3 - Device Research Conference - Conference Digest, DRC
BT - 74th Annual Device Research Conference, DRC 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 74th Annual Device Research Conference, DRC 2016
Y2 - 19 June 2016 through 22 June 2016
ER -