Physics-based switching model for Cu/SiO2/W quantum memristor

S. R. Nandakumar; Bipin Rajendran

doi:10.1109/DRC.2016.7548509

Physics-based switching model for Cu/SiO₂/W quantum memristor

S. R. Nandakumar, Bipin Rajendran

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Memristive devices are leading candidates for realizing next generation non-volatile memory [1] and brain-inspired neuromorphic computing systems [2]. However, most of these devices operate at high voltages (1-3 V) and require 100s of μA for programming. We recently demonstrated a Cu/SiO₂/W memristor device, exhibiting half-integer quantum conductance states at room temperature and sub-300 mV switching [3]. In this paper we develop a physics based model for this device, capturing the observed experimental programming characteristics including its switching response, conductance quantization, and pulse response.

Original language	English (US)
Title of host publication	74th Annual Device Research Conference, DRC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Volume	2016-August
ISBN (Electronic)	9781509028276
DOIs	https://doi.org/10.1109/DRC.2016.7548509
State	Published - Aug 22 2016
Event	74th Annual Device Research Conference, DRC 2016 - Newark, United States Duration: Jun 19 2016 → Jun 22 2016

Other

Other	74th Annual Device Research Conference, DRC 2016
Country	United States
City	Newark
Period	6/19/16 → 6/22/16

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2016.7548509

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title = "Physics-based switching model for Cu/SiO2/W quantum memristor",

abstract = "Memristive devices are leading candidates for realizing next generation non-volatile memory [1] and brain-inspired neuromorphic computing systems [2]. However, most of these devices operate at high voltages (1-3 V) and require 100s of μA for programming. We recently demonstrated a Cu/SiO2/W memristor device, exhibiting half-integer quantum conductance states at room temperature and sub-300 mV switching [3]. In this paper we develop a physics based model for this device, capturing the observed experimental programming characteristics including its switching response, conductance quantization, and pulse response.",

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doi = "10.1109/DRC.2016.7548509",

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booktitle = "74th Annual Device Research Conference, DRC 2016",

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note = "74th Annual Device Research Conference, DRC 2016 ; Conference date: 19-06-2016 Through 22-06-2016",

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N2 - Memristive devices are leading candidates for realizing next generation non-volatile memory [1] and brain-inspired neuromorphic computing systems [2]. However, most of these devices operate at high voltages (1-3 V) and require 100s of μA for programming. We recently demonstrated a Cu/SiO2/W memristor device, exhibiting half-integer quantum conductance states at room temperature and sub-300 mV switching [3]. In this paper we develop a physics based model for this device, capturing the observed experimental programming characteristics including its switching response, conductance quantization, and pulse response.

AB - Memristive devices are leading candidates for realizing next generation non-volatile memory [1] and brain-inspired neuromorphic computing systems [2]. However, most of these devices operate at high voltages (1-3 V) and require 100s of μA for programming. We recently demonstrated a Cu/SiO2/W memristor device, exhibiting half-integer quantum conductance states at room temperature and sub-300 mV switching [3]. In this paper we develop a physics based model for this device, capturing the observed experimental programming characteristics including its switching response, conductance quantization, and pulse response.

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DO - 10.1109/DRC.2016.7548509

M3 - Conference contribution

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VL - 2016-August

BT - 74th Annual Device Research Conference, DRC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 74th Annual Device Research Conference, DRC 2016

Y2 - 19 June 2016 through 22 June 2016

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