Physics-based switching model for Cu/SiO2/W quantum memristor

S. R. Nandakumar, Bipin Rajendran

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


Memristive devices are leading candidates for realizing next generation non-volatile memory [1] and brain-inspired neuromorphic computing systems [2]. However, most of these devices operate at high voltages (1-3 V) and require 100s of μA for programming. We recently demonstrated a Cu/SiO2/W memristor device, exhibiting half-integer quantum conductance states at room temperature and sub-300 mV switching [3]. In this paper we develop a physics based model for this device, capturing the observed experimental programming characteristics including its switching response, conductance quantization, and pulse response.

Original languageEnglish (US)
Title of host publication74th Annual Device Research Conference, DRC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509028276
StatePublished - Aug 22 2016
Event74th Annual Device Research Conference, DRC 2016 - Newark, United States
Duration: Jun 19 2016Jun 22 2016

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Other74th Annual Device Research Conference, DRC 2016
Country/TerritoryUnited States

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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