Planarized aluminum deposition on TiW and TiN layers by high temperature evaporation

Keyphrases

• Angstrom 100%
• TiN Layer 100%
• High-temperature Evaporation 100%
• Aluminum Deposition 100%
• Deep Trench 66%
• Planarization 66%
• Diode 33%
• Scanning Electron Microscopy 33%
• Wafer 33%
• Submicron 33%
• Barrier Layer 33%
• Evaporation Process 33%
• Coated Substrate 33%
• Deposition Rate 33%
• Leakage Assessment 33%
• Similar Processes 33%
• Temperature Process 33%
• Two-temperature 33%
• Final Temperature 33%
• Substrate Topography 33%
• Failure Temperature 33%
• Evaporation of Al 33%
• Material Integrity 33%
• Via Filling 33%

Engineering

• Planarization 100%
• Barrier Layer 50%
• Deposition Rate 50%
• Final Temperature 50%