Plasma damage immunity of thin gate oxide grown on very lightly N+ implanted silicon

K. P. Cheung, D. Misra, J. I. Colonell, C. T. Liu, Y. Ma, C. P. Chang, W. Y.C. Lai, R. Liu, C. S. Pai

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Plasma damage immunity of gate oxide grown on very low dose (2 × 1013/cm2) N+ implanted silicon is found to be improved comparing to regular gate oxide of similar thickness. Both hole trapping and electron trapping are suppressed by the incorporation of nitrogen into the gate oxide. Hole trapping behavior was determined from the relationship between initial electron trapping slope (IETS) and threshold voltage shifts due to current stress. This method is believed to be far more reliable than the typical method of initial gate voltage lowering during current stress.

Original languageEnglish (US)
Pages (from-to)231-233
Number of pages3
JournalIEEE Electron Device Letters
Volume19
Issue number7
DOIs
StatePublished - Jul 1998

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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