Plasma enhanced chemical vapor deposition of Si-N-C-H films from environmentally benign organosilanes

R. A. Levy, J. M. Grow, Y. Yu, K. T. Shih

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The environmentally benign precursors diethylsilane (DES) and di-t-butylsilane were used with NH3 to synthesize hydrogenated silicon carbonitride films by plasma enhanced chemical vapor deposition. The growth kinetics and film properties were examined as a function of deposition temperature, pressure, and NH3/organosilane ratio. The growth rate was observed to decrease with higher temperature and higher NH3/organosilane ratio while increasing with higher total pressure. Values of index of refraction, stress, hardness, and Young's modulus were measured as a function of processing variables and related to film density and resulting film compositions. Oxidation of the films was noted to occur at low deposition temperatures, low NH3/ organosilane ratios, and high pressures. Carbon was present in all deposits and decreased slightly with higher NH3/organosilane flow ratios.

Original languageEnglish (US)
Pages (from-to)47-52
Number of pages6
JournalMaterials Letters
Volume24
Issue number1-3
DOIs
StatePublished - Jun 1995

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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