Keyphrases
Deposition Temperature
20%
Environmentally Benign
100%
Film Composition
20%
Film Density
20%
Film Properties
20%
Flow Ratio
20%
Growth Kinetics
20%
Growth Rate
20%
High Pressure
20%
High Temperature
20%
Hydrogenated Silicon
20%
Index of Refraction
20%
Kinetic Properties
20%
Low Deposition Temperature
20%
Organosilane
100%
Plasma-enhanced Chemical Vapor Deposition (PECVD)
100%
Processing Parameters
20%
Si-N
100%
Silicon Carbonitride Films
20%
Total Pressure
20%
Young's Modulus
20%
Engineering
Carbonitrides
20%
Chemical Vapor Deposition
100%
Deposition Temperature
40%
Film Density
20%
Film Property
20%
Growth Kinetics
20%
Index of Refraction
20%
Organosilane
100%
Processing Variable
20%
Vapor Deposition
100%
Young's Modulus
20%
Material Science
Carbon Nitride
16%
Density
16%
Film
100%
Oxidation Reaction
16%
Plasma-Enhanced Chemical Vapor Deposition
100%
Silicon
16%
Young's Modulus
16%
Chemical Engineering
Carbon Nitride
50%
Plasma Enhanced Chemical Vapor Deposition
100%