Plasma enhanced chemical vapor deposition of silicon nitride from novel organosilanes

J. M. Grow, R. A. Levy, Y. Yu, K. T. Shih

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


The environmentally benign precursors diethylsilane and di-t-butylsilane were used with NH3 to synthesize silicon nitride films by plasma enhanced chemical vapor deposition. The growth kinetics and film properties were examined as a function of deposition temperature, total pressure, and NH3/organosilane ratio. The growth rate was observed to decrease with higher temperature and higher NH3/organosilane ratio while increasing with higher total pressure. Values of index of refraction, film stress, hardness, and Young's modulus were measured as a function of processing variables and related to film density and resulting film composition. Oxidation of the films was noted to occur at high pressures, low temperatures, and low NH3/organosilane ratios. Carbon incorporation was present for all deposits and appeared not to be dependent on processing conditions.

Original languageEnglish (US)
Pages (from-to)241-246
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1994
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 5 1994Apr 6 1994

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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