Plasma enhanced chemical vapor deposition of silicon nitride from novel organosilanes

J. M. Grow; R. A. Levy; Y. Yu; K. T. Shih

doi:10.1557/proc-344-241

Plasma enhanced chemical vapor deposition of silicon nitride from novel organosilanes

J. M. Grow, R. A. Levy, Y. Yu, K. T. Shih

Physics

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

The environmentally benign precursors diethylsilane and di-t-butylsilane were used with NH₃ to synthesize silicon nitride films by plasma enhanced chemical vapor deposition. The growth kinetics and film properties were examined as a function of deposition temperature, total pressure, and NH₃/organosilane ratio. The growth rate was observed to decrease with higher temperature and higher NH₃/organosilane ratio while increasing with higher total pressure. Values of index of refraction, film stress, hardness, and Young's modulus were measured as a function of processing variables and related to film density and resulting film composition. Oxidation of the films was noted to occur at high pressures, low temperatures, and low NH₃/organosilane ratios. Carbon incorporation was present for all deposits and appeared not to be dependent on processing conditions.

Original language	English (US)
Pages (from-to)	241-246
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	344
DOIs	https://doi.org/10.1557/proc-344-241
State	Published - 1994
Event	Proceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 5 1994 → Apr 6 1994

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/proc-344-241

Cite this

@article{bf5033dbd41c40c6a3f302edd2e09c69,

title = "Plasma enhanced chemical vapor deposition of silicon nitride from novel organosilanes",

abstract = "The environmentally benign precursors diethylsilane and di-t-butylsilane were used with NH3 to synthesize silicon nitride films by plasma enhanced chemical vapor deposition. The growth kinetics and film properties were examined as a function of deposition temperature, total pressure, and NH3/organosilane ratio. The growth rate was observed to decrease with higher temperature and higher NH3/organosilane ratio while increasing with higher total pressure. Values of index of refraction, film stress, hardness, and Young's modulus were measured as a function of processing variables and related to film density and resulting film composition. Oxidation of the films was noted to occur at high pressures, low temperatures, and low NH3/organosilane ratios. Carbon incorporation was present for all deposits and appeared not to be dependent on processing conditions.",

author = "Grow, {J. M.} and Levy, {R. A.} and Y. Yu and Shih, {K. T.}",

year = "1994",

doi = "10.1557/proc-344-241",

language = "English (US)",

volume = "344",

pages = "241--246",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1994 MRS Spring Meeting ; Conference date: 05-04-1994 Through 06-04-1994",

}

TY - JOUR

T1 - Plasma enhanced chemical vapor deposition of silicon nitride from novel organosilanes

AU - Grow, J. M.

AU - Levy, R. A.

AU - Yu, Y.

AU - Shih, K. T.

PY - 1994

Y1 - 1994

N2 - The environmentally benign precursors diethylsilane and di-t-butylsilane were used with NH3 to synthesize silicon nitride films by plasma enhanced chemical vapor deposition. The growth kinetics and film properties were examined as a function of deposition temperature, total pressure, and NH3/organosilane ratio. The growth rate was observed to decrease with higher temperature and higher NH3/organosilane ratio while increasing with higher total pressure. Values of index of refraction, film stress, hardness, and Young's modulus were measured as a function of processing variables and related to film density and resulting film composition. Oxidation of the films was noted to occur at high pressures, low temperatures, and low NH3/organosilane ratios. Carbon incorporation was present for all deposits and appeared not to be dependent on processing conditions.

AB - The environmentally benign precursors diethylsilane and di-t-butylsilane were used with NH3 to synthesize silicon nitride films by plasma enhanced chemical vapor deposition. The growth kinetics and film properties were examined as a function of deposition temperature, total pressure, and NH3/organosilane ratio. The growth rate was observed to decrease with higher temperature and higher NH3/organosilane ratio while increasing with higher total pressure. Values of index of refraction, film stress, hardness, and Young's modulus were measured as a function of processing variables and related to film density and resulting film composition. Oxidation of the films was noted to occur at high pressures, low temperatures, and low NH3/organosilane ratios. Carbon incorporation was present for all deposits and appeared not to be dependent on processing conditions.

UR - http://www.scopus.com/inward/record.url?scp=0028756026&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028756026&partnerID=8YFLogxK

U2 - 10.1557/proc-344-241

DO - 10.1557/proc-344-241

M3 - Conference article

AN - SCOPUS:0028756026

SN - 0272-9172

VL - 344

SP - 241

EP - 246

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1994 MRS Spring Meeting

Y2 - 5 April 1994 through 6 April 1994

ER -

Plasma enhanced chemical vapor deposition of silicon nitride from novel organosilanes

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this