Keyphrases
Plasma-enhanced Chemical Vapor Deposition (PECVD)
100%
Silicon Nitride
100%
Organosilane
100%
Total Pressure
50%
High Temperature
25%
Growth Rate
25%
Kinetic Properties
25%
Film Properties
25%
Environmentally Benign
25%
Processing Parameters
25%
Young's Modulus
25%
Processing Conditions
25%
Index of Refraction
25%
Growth Kinetics
25%
Deposition Temperature
25%
Film Composition
25%
Film Density
25%
Silicon Nitride Film
25%
High Pressure-low Temperature
25%
Film Stress
25%
Carbon Incorporation
25%
Engineering
Chemical Vapor Deposition
100%
Vapor Deposition
100%
Nitride
100%
Organosilane
100%
Low-Temperature
25%
Film Property
25%
Young's Modulus
25%
Processing Condition
25%
Deposition Temperature
25%
Growth Kinetics
25%
Index of Refraction
25%
Processing Variable
25%
Film Density
25%
Carbon Incorporation
25%
Material Science
Film
100%
Silicon Nitride
100%
Plasma-Enhanced Chemical Vapor Deposition
100%
Density
16%
Oxidation Reaction
16%
Young's Modulus
16%
Chemical Engineering
Plasma Enhanced Chemical Vapor Deposition
100%
Silicon Nitride
100%