Abstract
Dry etching can deleteriously affect strained SiGe films by initiating misfit strain discontinuity in the film as well as in the interface. Annealing behavior of RIE induced defects is reported in this paper. Transmission electron microscopic investigations indicate creation of dislocation loops (having size in the range 10-14 A) due to ion bombardment stress. Deep Level Transient Spectroscopic measurements reveal defect levels at 0.62, 0.57, 0.56 and 0.44 eV for the dry etched samples annealed at 650, 700, 750 and 800 °C respectively. Size of the dislocation loops estimated from the DLTS results are in good agreement with that obtained from the TEM measurements.
| Original language | English (US) |
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| Pages | 133-136 |
| Number of pages | 4 |
| State | Published - 1996 |
| Event | Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID - Santa Clara, CA, USA Duration: May 13 1996 → May 14 1996 |
Other
| Other | Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID |
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| City | Santa Clara, CA, USA |
| Period | 5/13/96 → 5/14/96 |
All Science Journal Classification (ASJC) codes
- General Engineering