Plasma etching of dielectric films using the non-global-warming gas CF3I

A. Misra; J. Sees; L. Hall; R. A. Levy; V. B. Zaitsev; K. Aryusook; C. Ravindranath; V. Sigal; S. Kesari; D. Rufin

doi:10.1016/S0167-577X(97)00209-7

Plasma etching of dielectric films using the non-global-warming gas CF₃I

A. Misra, J. Sees, L. Hall, R. A. Levy, V. B. Zaitsev, K. Aryusook, C. Ravindranath, V. Sigal, S. Kesari, D. Rufin

Physics

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

In this study, trifluoroiodomethane (CF₃I), a non-global-warming gas, has been investigated as a substitute for typical PFCs currently used in wafer patterning and CVD chamber cleaning processes. Dielectric films consisting of plasma enhanced chemically vapor deposited silicon dioxide and silicon nitride were comparatively etched in CF₃I and C₂F₆/O₂ plasma environments. The etch rate of these films was ascertained as a function of applied rf power, etchant gas flow rate, reaction chamber pressure and CF₃I:O₂ ratio.

Original language	English (US)
Pages (from-to)	415-419
Number of pages	5
Journal	Materials Letters
Volume	34
Issue number	3-6
DOIs	https://doi.org/10.1016/S0167-577X(97)00209-7
State	Published - Mar 1998

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
General Materials Science

Keywords

CFI
CVD chamber cleaning
Dielectric etching
Non-global-warming gas
Perfluorinated compounds
Trifluoromethane
Wafer patterning

Access to Document

10.1016/S0167-577X(97)00209-7

Cite this

@article{301e7cd0314147a4b43ee403bed07621,

title = "Plasma etching of dielectric films using the non-global-warming gas CF3I",

abstract = "In this study, trifluoroiodomethane (CF3I), a non-global-warming gas, has been investigated as a substitute for typical PFCs currently used in wafer patterning and CVD chamber cleaning processes. Dielectric films consisting of plasma enhanced chemically vapor deposited silicon dioxide and silicon nitride were comparatively etched in CF3I and C2F6/O2 plasma environments. The etch rate of these films was ascertained as a function of applied rf power, etchant gas flow rate, reaction chamber pressure and CF3I:O2 ratio.",

keywords = "CFI, CVD chamber cleaning, Dielectric etching, Non-global-warming gas, Perfluorinated compounds, Trifluoromethane, Wafer patterning",

author = "A. Misra and J. Sees and L. Hall and Levy, {R. A.} and Zaitsev, {V. B.} and K. Aryusook and C. Ravindranath and V. Sigal and S. Kesari and D. Rufin",

year = "1998",

month = mar,

doi = "10.1016/S0167-577X(97)00209-7",

language = "English (US)",

volume = "34",

pages = "415--419",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

number = "3-6",

}

TY - JOUR

T1 - Plasma etching of dielectric films using the non-global-warming gas CF3I

AU - Misra, A.

AU - Sees, J.

AU - Hall, L.

AU - Levy, R. A.

AU - Zaitsev, V. B.

AU - Aryusook, K.

AU - Ravindranath, C.

AU - Sigal, V.

AU - Kesari, S.

AU - Rufin, D.

PY - 1998/3

Y1 - 1998/3

N2 - In this study, trifluoroiodomethane (CF3I), a non-global-warming gas, has been investigated as a substitute for typical PFCs currently used in wafer patterning and CVD chamber cleaning processes. Dielectric films consisting of plasma enhanced chemically vapor deposited silicon dioxide and silicon nitride were comparatively etched in CF3I and C2F6/O2 plasma environments. The etch rate of these films was ascertained as a function of applied rf power, etchant gas flow rate, reaction chamber pressure and CF3I:O2 ratio.

AB - In this study, trifluoroiodomethane (CF3I), a non-global-warming gas, has been investigated as a substitute for typical PFCs currently used in wafer patterning and CVD chamber cleaning processes. Dielectric films consisting of plasma enhanced chemically vapor deposited silicon dioxide and silicon nitride were comparatively etched in CF3I and C2F6/O2 plasma environments. The etch rate of these films was ascertained as a function of applied rf power, etchant gas flow rate, reaction chamber pressure and CF3I:O2 ratio.

KW - CFI

KW - CVD chamber cleaning

KW - Dielectric etching

KW - Non-global-warming gas

KW - Perfluorinated compounds

KW - Trifluoromethane

KW - Wafer patterning

UR - http://www.scopus.com/inward/record.url?scp=0032025436&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032025436&partnerID=8YFLogxK

U2 - 10.1016/S0167-577X(97)00209-7

DO - 10.1016/S0167-577X(97)00209-7

M3 - Article

AN - SCOPUS:0032025436

SN - 0167-577X

VL - 34

SP - 415

EP - 419

JO - Materials Letters

JF - Materials Letters

IS - 3-6

ER -