Plasma etching of dielectric films using the non-global-warming gas CF3I

A. Misra, J. Sees, L. Hall, Roland Levy, V. B. Zaitsev, K. Aryusook, C. Ravindranath, V. Sigal, S. Kesari, D. Rufin

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

In this study, trifluoroiodomethane (CF3I), a non-global-warming gas, has been investigated as a substitute for typical PFCs currently used in wafer patterning and CVD chamber cleaning processes. Dielectric films consisting of plasma enhanced chemically vapor deposited silicon dioxide and silicon nitride were comparatively etched in CF3I and C2F6/O2 plasma environments. The etch rate of these films was ascertained as a function of applied rf power, etchant gas flow rate, reaction chamber pressure and CF3I:O2 ratio.

Original languageEnglish (US)
Pages (from-to)415-419
Number of pages5
JournalMaterials Letters
Volume34
Issue number3-6
DOIs
StatePublished - Jan 1 1998

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint

Dive into the research topics of 'Plasma etching of dielectric films using the non-global-warming gas CF<sub>3</sub>I'. Together they form a unique fingerprint.

Cite this