Plasma etching of dielectric films using the non-global-warming gas CF3I

A. Misra; J. Sees; L. Hall; Roland Levy; V. B. Zaitsev; K. Aryusook; C. Ravindranath; V. Sigal; S. Kesari; D. Rufin

doi:10.1016/S0167-577X(97)00209-7

Plasma etching of dielectric films using the non-global-warming gas CF₃I

A. Misra, J. Sees, L. Hall, Roland Levy, V. B. Zaitsev, K. Aryusook, C. Ravindranath, V. Sigal, S. Kesari, D. Rufin

Physics

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

In this study, trifluoroiodomethane (CF₃I), a non-global-warming gas, has been investigated as a substitute for typical PFCs currently used in wafer patterning and CVD chamber cleaning processes. Dielectric films consisting of plasma enhanced chemically vapor deposited silicon dioxide and silicon nitride were comparatively etched in CF₃I and C₂F₆/O₂ plasma environments. The etch rate of these films was ascertained as a function of applied rf power, etchant gas flow rate, reaction chamber pressure and CF₃I:O₂ ratio.

Original language	English (US)
Pages (from-to)	415-419
Number of pages	5
Journal	Materials Letters
Volume	34
Issue number	3-6
DOIs	https://doi.org/10.1016/S0167-577X(97)00209-7
State	Published - Jan 1 1998

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/S0167-577X(97)00209-7

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title = "Plasma etching of dielectric films using the non-global-warming gas CF3I",

abstract = "In this study, trifluoroiodomethane (CF3I), a non-global-warming gas, has been investigated as a substitute for typical PFCs currently used in wafer patterning and CVD chamber cleaning processes. Dielectric films consisting of plasma enhanced chemically vapor deposited silicon dioxide and silicon nitride were comparatively etched in CF3I and C2F6/O2 plasma environments. The etch rate of these films was ascertained as a function of applied rf power, etchant gas flow rate, reaction chamber pressure and CF3I:O2 ratio.",

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T1 - Plasma etching of dielectric films using the non-global-warming gas CF3I

AU - Misra, A.

AU - Sees, J.

AU - Hall, L.

AU - Levy, Roland

AU - Zaitsev, V. B.

AU - Aryusook, K.

AU - Ravindranath, C.

AU - Sigal, V.

AU - Kesari, S.

AU - Rufin, D.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - In this study, trifluoroiodomethane (CF3I), a non-global-warming gas, has been investigated as a substitute for typical PFCs currently used in wafer patterning and CVD chamber cleaning processes. Dielectric films consisting of plasma enhanced chemically vapor deposited silicon dioxide and silicon nitride were comparatively etched in CF3I and C2F6/O2 plasma environments. The etch rate of these films was ascertained as a function of applied rf power, etchant gas flow rate, reaction chamber pressure and CF3I:O2 ratio.

AB - In this study, trifluoroiodomethane (CF3I), a non-global-warming gas, has been investigated as a substitute for typical PFCs currently used in wafer patterning and CVD chamber cleaning processes. Dielectric films consisting of plasma enhanced chemically vapor deposited silicon dioxide and silicon nitride were comparatively etched in CF3I and C2F6/O2 plasma environments. The etch rate of these films was ascertained as a function of applied rf power, etchant gas flow rate, reaction chamber pressure and CF3I:O2 ratio.

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EP - 419

JO - Materials Letters

JF - Materials Letters

IS - 3-6

ER -

Plasma etching of dielectric films using the non-global-warming gas CF₃I

Abstract

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