In this study, trifluoroiodomethane (CF3I), a non-global-warming gas, has been investigated as a substitute for typical PFCs currently used in wafer patterning and CVD chamber cleaning processes. Dielectric films consisting of plasma enhanced chemically vapor deposited silicon dioxide and silicon nitride were comparatively etched in CF3I and C2F6/O2 plasma environments. The etch rate of these films was ascertained as a function of applied rf power, etchant gas flow rate, reaction chamber pressure and CF3I:O2 ratio.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering