Plasma process-induced band-gap modifications of a strained SiGe heterostructure

P. K. Swain; S. Madapur; D. Misra

doi:10.1063/1.124098

Plasma process-induced band-gap modifications of a strained SiGe heterostructure

P. K. Swain, S. Madapur, D. Misra

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The effect of plasma etching and subsequent annealing on the valence-band discontinuity ΔE_V at the Si/SiGe interface was investigated. Dry etched samples demonstrated a faster relaxation mechanism as compared to their wet etched counterparts. In both cry and wet etched samples as the annealing temperature increases the valence-band discontinuity is reduced and completely disappeared at higher temperature annealing. A simple technique is proposed to measure the band gap of the SiGe films by a C-V measurement using a MOS structure.

Original language	English (US)
Pages (from-to)	3173-3175
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	21
DOIs	https://doi.org/10.1063/1.124098
State	Published - May 24 1999

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.124098

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title = "Plasma process-induced band-gap modifications of a strained SiGe heterostructure",

abstract = "The effect of plasma etching and subsequent annealing on the valence-band discontinuity ΔEV at the Si/SiGe interface was investigated. Dry etched samples demonstrated a faster relaxation mechanism as compared to their wet etched counterparts. In both cry and wet etched samples as the annealing temperature increases the valence-band discontinuity is reduced and completely disappeared at higher temperature annealing. A simple technique is proposed to measure the band gap of the SiGe films by a C-V measurement using a MOS structure.",

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N2 - The effect of plasma etching and subsequent annealing on the valence-band discontinuity ΔEV at the Si/SiGe interface was investigated. Dry etched samples demonstrated a faster relaxation mechanism as compared to their wet etched counterparts. In both cry and wet etched samples as the annealing temperature increases the valence-band discontinuity is reduced and completely disappeared at higher temperature annealing. A simple technique is proposed to measure the band gap of the SiGe films by a C-V measurement using a MOS structure.

AB - The effect of plasma etching and subsequent annealing on the valence-band discontinuity ΔEV at the Si/SiGe interface was investigated. Dry etched samples demonstrated a faster relaxation mechanism as compared to their wet etched counterparts. In both cry and wet etched samples as the annealing temperature increases the valence-band discontinuity is reduced and completely disappeared at higher temperature annealing. A simple technique is proposed to measure the band gap of the SiGe films by a C-V measurement using a MOS structure.

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Plasma process-induced band-gap modifications of a strained SiGe heterostructure

Abstract

All Science Journal Classification (ASJC) codes

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