Plasma process-induced band-gap modifications of a strained SiGe heterostructure

P. K. Swain, S. Madapur, D. Misra

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


The effect of plasma etching and subsequent annealing on the valence-band discontinuity ΔEV at the Si/SiGe interface was investigated. Dry etched samples demonstrated a faster relaxation mechanism as compared to their wet etched counterparts. In both cry and wet etched samples as the annealing temperature increases the valence-band discontinuity is reduced and completely disappeared at higher temperature annealing. A simple technique is proposed to measure the band gap of the SiGe films by a C-V measurement using a MOS structure.

Original languageEnglish (US)
Pages (from-to)3173-3175
Number of pages3
JournalApplied Physics Letters
Issue number21
StatePublished - May 24 1999

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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