The effect of plasma etching and subsequent annealing on the valence-band discontinuity ΔEV at the Si/SiGe interface was investigated. Dry etched samples demonstrated a faster relaxation mechanism as compared to their wet etched counterparts. In both cry and wet etched samples as the annealing temperature increases the valence-band discontinuity is reduced and completely disappeared at higher temperature annealing. A simple technique is proposed to measure the band gap of the SiGe films by a C-V measurement using a MOS structure.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)