Plasma process-induced band-gap modifications of a strained SiGe heterostructure

Keyphrases

• Plasma Process 100%
• Strained SiGe 100%
• Valence Band Discontinuity 100%
• SiGe Heterostructures 100%
• Bandgap Modification 100%
• SiGe 50%
• Band Gap 50%
• Simple Technique 50%
• Plasma Etching 50%
• Temperature Rise 50%
• Annealing Temperature 50%
• Subsequent Annealing 50%
• High-temperature Annealing 50%
• Fast Relaxation 50%
• C-V Measurement 50%
• MOS Structure 50%
• Relaxation Mechanism 50%
• SiGe Film 50%

Engineering

• Heterojunctions 100%
• Energy Gap 100%
• Valence Band 100%
• Plasma Process 100%
• Temperature Increase 50%
• Annealing Temperature 50%

Material Science

• Heterojunction 100%
• Annealing 100%
• Film 33%
• Plasma Etching 33%