Platinum and rhodium silicide-germanide optoelectronics

M. P. Lepselter, A. T. Fiory, N. M. Ravindra

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Since the introduction of SiO 2/Si devices in the 1960s, the only basic change in the design of a MOSFET has been in the gate length. The channel thickness has fundamentally remained unchanged, as the inversion layer in a silicon MOSFET is still about 10 nm thick. Bipolar transistor base widths have been of sub-micron dimensions all this time. It is time for a new property to be exploited in concert with the high mobility strained-silicon channels and silicon-germanium alloys. This property is the inherently low parasitic series resistance of Schottky barrier contacts. Schottky contacts, beam leads, and microbridges, while originally developed in silicon, have been successfully integrated into compound semiconductors for optoelectronics. Reintroduction of these technologies in optoelectronics based on silicon-germanium is proposed. Several new applications using platinum and rhodium compounds of silicon and germanium are presented.

Original languageEnglish (US)
Pages (from-to)403-416
Number of pages14
JournalJournal of Electronic Materials
Volume37
Issue number4
DOIs
StatePublished - Apr 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Keywords

  • High speed
  • Infrared
  • Schottky-barrier detectors
  • SiGe alloy semiconductors
  • Wavelength selectability

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