Abstract
An attempt is made to evaluate the polarizability of amorphous silicon. These evaluations are carried out for samples prepared by chemical vapour deposition (CVD) and glow‐discharge (GD). Spectroscopic models like that of Wemple‐Didomenico and Ance are employed for the purposes of calculation. This study may serve as a bridge between experimental results that follow from Raman or infra‐red spectroscopy and those that are obtained from absorptance/reflectance studies.
Original language | English (US) |
---|---|
Pages (from-to) | 611-618 |
Number of pages | 8 |
Journal | physica status solidi (b) |
Volume | 123 |
Issue number | 2 |
DOIs | |
State | Published - Jun 1 1984 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics