Polarization-Engineered p-Type Electron-Blocking-Layer-Free III-Nitride Deep-Ultraviolet Light-Emitting Diodes for Enhanced Carrier Transport

Ravi Teja Velpula, Barsha Jain, Trupti Ranjan Lenka, Renjie Wang, Hieu Pham Trung Nguyen

Research output: Contribution to journalArticlepeer-review

Abstract

Electron leakage is one of the critical challenges in AlGaN ultraviolet (UV) light-emitting diodes (LEDs). In this regard, a p-type AlGaN electron-blocking layer (EBL) has been utilized to suppress electron leakage. However, it affects the hole injection due to the generation of positive polarization sheet charges at the hetero-interface of the EBL and the last quantum barrier (QB). To address this problem, we propose an EBL-free AlGaN UV LED using polarization-engineered graded QBs instead of conventional QBs. The proposed structure could enhance the carrier confinement in the active region and significantly reduces electron leakage due to the progressively increased effective conduction band barrier heights. Substantially, the proposed structure exhibits higher optical power and wall-plug efficiency at 60 mA current injection, which are boosted by ~85.9% and ~53.6% compared to the conventional structure. Such a unique LED design could pave the way for the next generation of high-power deep UV light sources.

Original languageEnglish (US)
Pages (from-to)838-846
Number of pages9
JournalJournal of Electronic Materials
Volume51
Issue number2
DOIs
StatePublished - Feb 2022

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Keywords

  • AlGaN
  • electron-blocking layer
  • polarization sheet charge
  • Ultraviolet light-emitting diodes
  • wall-plug efficiency

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