Abstract
An overview is given of the qualitative difference in angular dependencies of polarized Raman intensities for Si-Si, Si-Ge, and Ge-Ge vibrations in multilayers of Ge islands grown on Si. Data show that the dome-shaped Ge islands are fully relaxed and that the strain field is localized within the Si matrix. Measurements on corresponding samples containing pyramid-related islands do not indicate similar relaxation and strain transfer to the Si layers.
Original language | English (US) |
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Pages (from-to) | 5035-5037 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 83 |
Issue number | 24 |
DOIs | |
State | Published - Dec 15 2003 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)