Polarized Raman scattering and localized embedded strain in self-organized Si/Ge nanostructures

B. V. Kamenev; H. Grebel; L. Tsybeskov; T. I. Kamins; R. Stanley Williams; J. M. Baribeau; D. J. Lockwood

doi:10.1063/1.1628403

Polarized Raman scattering and localized embedded strain in self-organized Si/Ge nanostructures

B. V. Kamenev, H. Grebel, L. Tsybeskov, T. I. Kamins, R. Stanley Williams, J. M. Baribeau, D. J. Lockwood

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26 Scopus citations

Abstract

An overview is given of the qualitative difference in angular dependencies of polarized Raman intensities for Si-Si, Si-Ge, and Ge-Ge vibrations in multilayers of Ge islands grown on Si. Data show that the dome-shaped Ge islands are fully relaxed and that the strain field is localized within the Si matrix. Measurements on corresponding samples containing pyramid-related islands do not indicate similar relaxation and strain transfer to the Si layers.

Original language	English (US)
Pages (from-to)	5035-5037
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	24
DOIs	https://doi.org/10.1063/1.1628403
State	Published - Dec 15 2003

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1628403

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abstract = "An overview is given of the qualitative difference in angular dependencies of polarized Raman intensities for Si-Si, Si-Ge, and Ge-Ge vibrations in multilayers of Ge islands grown on Si. Data show that the dome-shaped Ge islands are fully relaxed and that the strain field is localized within the Si matrix. Measurements on corresponding samples containing pyramid-related islands do not indicate similar relaxation and strain transfer to the Si layers.",

author = "Kamenev, {B. V.} and H. Grebel and L. Tsybeskov and Kamins, {T. I.} and Williams, {R. Stanley} and Baribeau, {J. M.} and Lockwood, {D. J.}",

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T1 - Polarized Raman scattering and localized embedded strain in self-organized Si/Ge nanostructures

AU - Kamenev, B. V.

AU - Grebel, H.

AU - Tsybeskov, L.

AU - Kamins, T. I.

AU - Williams, R. Stanley

AU - Baribeau, J. M.

AU - Lockwood, D. J.

PY - 2003/12/15

Y1 - 2003/12/15

N2 - An overview is given of the qualitative difference in angular dependencies of polarized Raman intensities for Si-Si, Si-Ge, and Ge-Ge vibrations in multilayers of Ge islands grown on Si. Data show that the dome-shaped Ge islands are fully relaxed and that the strain field is localized within the Si matrix. Measurements on corresponding samples containing pyramid-related islands do not indicate similar relaxation and strain transfer to the Si layers.

AB - An overview is given of the qualitative difference in angular dependencies of polarized Raman intensities for Si-Si, Si-Ge, and Ge-Ge vibrations in multilayers of Ge islands grown on Si. Data show that the dome-shaped Ge islands are fully relaxed and that the strain field is localized within the Si matrix. Measurements on corresponding samples containing pyramid-related islands do not indicate similar relaxation and strain transfer to the Si layers.

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DO - 10.1063/1.1628403

M3 - Article

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JF - Applied Physics Letters

SN - 0003-6951

IS - 24

ER -

Polarized Raman scattering and localized embedded strain in self-organized Si/Ge nanostructures

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