Polarized Raman scattering and localized embedded strain in self-organized Si/Ge nanostructures

B. V. Kamenev, H. Grebel, L. Tsybeskov, T. I. Kamins, R. Stanley Williams, J. M. Baribeau, D. J. Lockwood

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

An overview is given of the qualitative difference in angular dependencies of polarized Raman intensities for Si-Si, Si-Ge, and Ge-Ge vibrations in multilayers of Ge islands grown on Si. Data show that the dome-shaped Ge islands are fully relaxed and that the strain field is localized within the Si matrix. Measurements on corresponding samples containing pyramid-related islands do not indicate similar relaxation and strain transfer to the Si layers.

Original languageEnglish (US)
Pages (from-to)5035-5037
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number24
DOIs
StatePublished - Dec 15 2003

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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