@article{f535504c22a14917a21a89787234db53,
title = "Polarized Raman scattering and localized embedded strain in self-organized Si/Ge nanostructures",
abstract = "An overview is given of the qualitative difference in angular dependencies of polarized Raman intensities for Si-Si, Si-Ge, and Ge-Ge vibrations in multilayers of Ge islands grown on Si. Data show that the dome-shaped Ge islands are fully relaxed and that the strain field is localized within the Si matrix. Measurements on corresponding samples containing pyramid-related islands do not indicate similar relaxation and strain transfer to the Si layers.",
author = "Kamenev, {B. V.} and H. Grebel and L. Tsybeskov and Kamins, {T. I.} and Williams, {R. Stanley} and Baribeau, {J. M.} and Lockwood, {D. J.}",
note = "Funding Information: Kamenev B. V. Grebel H. Tsybeskov L. Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102 Kamins T. I. Williams R. Stanley Quantum Science Research, Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304 Baribeau J. M. Lockwood D. J. Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario K1A OR6, Canada 15 12 2003 83 24 5035 5037 16 July 2003 29 September 2003 2003-12-10T11:46:02 2003 American Institute of Physics Using polarized Raman spectroscopy, we examine different vibrational modes (i.e., Si–Si, Si–Ge, and Ge–Ge) in Si/Ge self-organized nanostructures. Here, we present unambiguous proof that multilayers of Ge nanometer-size, “dome-shaped” islands grown on a 〈100〉 Si substrate are nearly fully relaxed and that the built-in strain field is substantially localized in the surrounding Si matrix. In contrast, multilayers with “pyramid-shaped” islands do not show observable relaxation. The large strain in the Si layers of the multilayer dome samples correlates with the greater self-organization in these structures compared to the multilayer pyramid samples. ",
year = "2003",
month = dec,
day = "15",
doi = "10.1063/1.1628403",
language = "English (US)",
volume = "83",
pages = "5035--5037",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "24",
}