Raman scattering, x-ray diffraction and electron diffraction results show that thin films of silicon (ranging in thickness from a few hundred Å to 1 μm) prepared by chemical transport in low-pressure hydrogen plasma at a temperature between 230 and 280°C and a deposition rate of up to ∼0.5 Å sec-1, are polycrystalline. X-ray diffraction and transmission electron microscopic data indicate crystallite sizes amounting to a few hundred Å.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 1980|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)