Polycrystalline silicon films deposited in a glow discharge at temperatures below 250°C

Z. Iqbal; A. P. Webb; S. Vepřek

doi:10.1063/1.91416

Polycrystalline silicon films deposited in a glow discharge at temperatures below 250°C

Z. Iqbal, A. P. Webb, S. Vepřek

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Abstract

Raman scattering, x-ray diffraction and electron diffraction results show that thin films of silicon (ranging in thickness from a few hundred Å to 1 μm) prepared by chemical transport in low-pressure hydrogen plasma at a temperature between 230 and 280°C and a deposition rate of up to ∼0.5 Å sec^-1, are polycrystalline. X-ray diffraction and transmission electron microscopic data indicate crystallite sizes amounting to a few hundred Å.

Original language	English (US)
Pages (from-to)	163-165
Number of pages	3
Journal	Applied Physics Letters
Volume	36
Issue number	2
DOIs	https://doi.org/10.1063/1.91416
State	Published - 1980
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.91416

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@article{6fc368daae394c80aaac9aa904d80598,

title = "Polycrystalline silicon films deposited in a glow discharge at temperatures below 250°C",

abstract = "Raman scattering, x-ray diffraction and electron diffraction results show that thin films of silicon (ranging in thickness from a few hundred {\AA} to 1 μm) prepared by chemical transport in low-pressure hydrogen plasma at a temperature between 230 and 280°C and a deposition rate of up to ∼0.5 {\AA} sec-1, are polycrystalline. X-ray diffraction and transmission electron microscopic data indicate crystallite sizes amounting to a few hundred {\AA}.",

author = "Z. Iqbal and Webb, {A. P.} and S. Vep{\v r}ek",

year = "1980",

doi = "10.1063/1.91416",

language = "English (US)",

volume = "36",

pages = "163--165",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "2",

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T1 - Polycrystalline silicon films deposited in a glow discharge at temperatures below 250°C

AU - Iqbal, Z.

AU - Webb, A. P.

AU - Vepřek, S.

PY - 1980

Y1 - 1980

N2 - Raman scattering, x-ray diffraction and electron diffraction results show that thin films of silicon (ranging in thickness from a few hundred Å to 1 μm) prepared by chemical transport in low-pressure hydrogen plasma at a temperature between 230 and 280°C and a deposition rate of up to ∼0.5 Å sec-1, are polycrystalline. X-ray diffraction and transmission electron microscopic data indicate crystallite sizes amounting to a few hundred Å.

AB - Raman scattering, x-ray diffraction and electron diffraction results show that thin films of silicon (ranging in thickness from a few hundred Å to 1 μm) prepared by chemical transport in low-pressure hydrogen plasma at a temperature between 230 and 280°C and a deposition rate of up to ∼0.5 Å sec-1, are polycrystalline. X-ray diffraction and transmission electron microscopic data indicate crystallite sizes amounting to a few hundred Å.

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U2 - 10.1063/1.91416

DO - 10.1063/1.91416

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Polycrystalline silicon films deposited in a glow discharge at temperatures below 250°C

Abstract

All Science Journal Classification (ASJC) codes

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