Polycrystalline silicon films deposited in a glow discharge at temperatures below 250°C

Z. Iqbal, A. P. Webb, S. Vepřek

Research output: Contribution to journalArticlepeer-review

77 Scopus citations

Abstract

Raman scattering, x-ray diffraction and electron diffraction results show that thin films of silicon (ranging in thickness from a few hundred Å to 1 μm) prepared by chemical transport in low-pressure hydrogen plasma at a temperature between 230 and 280°C and a deposition rate of up to ∼0.5 Å sec-1, are polycrystalline. X-ray diffraction and transmission electron microscopic data indicate crystallite sizes amounting to a few hundred Å.

Original languageEnglish (US)
Pages (from-to)163-165
Number of pages3
JournalApplied Physics Letters
Volume36
Issue number2
DOIs
StatePublished - 1980

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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