Polycrystalline silicon films deposited in a glow discharge at temperatures below 250°C

Z. Iqbal; A. P. Webb; S. Vepřek

doi:10.1063/1.91416

Polycrystalline silicon films deposited in a glow discharge at temperatures below 250°C

Z. Iqbal
, A. P. Webb
, S. Vepřek

Research output: Contribution to journal › Article › peer-review

77 Scopus citations

Abstract

Raman scattering, x-ray diffraction and electron diffraction results show that thin films of silicon (ranging in thickness from a few hundred Å to 1 μm) prepared by chemical transport in low-pressure hydrogen plasma at a temperature between 230 and 280°C and a deposition rate of up to ∼0.5 Å sec^-1, are polycrystalline. X-ray diffraction and transmission electron microscopic data indicate crystallite sizes amounting to a few hundred Å.

Original language	English (US)
Pages (from-to)	163-165
Number of pages	3
Journal	Applied Physics Letters
Volume	36
Issue number	2
DOIs	https://doi.org/10.1063/1.91416
State	Published - 1980
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.91416

Cite this

@article{6fc368daae394c80aaac9aa904d80598,

title = "Polycrystalline silicon films deposited in a glow discharge at temperatures below 250°C",

abstract = "Raman scattering, x-ray diffraction and electron diffraction results show that thin films of silicon (ranging in thickness from a few hundred {\AA} to 1 μm) prepared by chemical transport in low-pressure hydrogen plasma at a temperature between 230 and 280°C and a deposition rate of up to ∼0.5 {\AA} sec-1, are polycrystalline. X-ray diffraction and transmission electron microscopic data indicate crystallite sizes amounting to a few hundred {\AA}.",

author = "Z. Iqbal and Webb, \{A. P.\} and S. Vep{\v r}ek",

year = "1980",

doi = "10.1063/1.91416",

language = "English (US)",

volume = "36",

pages = "163--165",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "2",

}

TY - JOUR

T1 - Polycrystalline silicon films deposited in a glow discharge at temperatures below 250°C

AU - Iqbal, Z.

AU - Webb, A. P.

AU - Vepřek, S.

PY - 1980

Y1 - 1980

N2 - Raman scattering, x-ray diffraction and electron diffraction results show that thin films of silicon (ranging in thickness from a few hundred Å to 1 μm) prepared by chemical transport in low-pressure hydrogen plasma at a temperature between 230 and 280°C and a deposition rate of up to ∼0.5 Å sec-1, are polycrystalline. X-ray diffraction and transmission electron microscopic data indicate crystallite sizes amounting to a few hundred Å.

AB - Raman scattering, x-ray diffraction and electron diffraction results show that thin films of silicon (ranging in thickness from a few hundred Å to 1 μm) prepared by chemical transport in low-pressure hydrogen plasma at a temperature between 230 and 280°C and a deposition rate of up to ∼0.5 Å sec-1, are polycrystalline. X-ray diffraction and transmission electron microscopic data indicate crystallite sizes amounting to a few hundred Å.

UR - https://www.scopus.com/pages/publications/0001160350

UR - https://www.scopus.com/pages/publications/0001160350#tab=citedBy

U2 - 10.1063/1.91416

DO - 10.1063/1.91416

M3 - Article

AN - SCOPUS:0001160350

SN - 0003-6951

VL - 36

SP - 163

EP - 165

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Polycrystalline silicon films deposited in a glow discharge at temperatures below 250°C

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this