Porous silicon light emitting diodes

C. Peng, L. Tsybeskov, S. P. Duttagupta, S. K. Kurinec, P. M. Fauchet

Research output: Contribution to conferencePaperpeer-review

Abstract

The design, manufacture and testing of numerous LED structures is reported. Porous layers used were prepared by anodic etching in an electrochemical cell. The chemical, physical and optical properties of the porous layer were varied by changing the wafer doping concentration and type, the current density, or the duration of the anodization. Several types of device structures were tested. This study emphasizes the results obtained from the first device. The threshold for detectable electroluminescence was observed to be 5 V, the external efficiency reached 0.01% at larger voltages and the LED output was stable for more than 100 hours of operation.

Original languageEnglish (US)
Pages15-16
Number of pages2
StatePublished - Dec 1 1994
Externally publishedYes
EventProceedings of the 1994 IEEE LEOS Annual Meeting. Part 1 (of 2) - Boston, MA, USA
Duration: Oct 31 1994Nov 3 1994

Other

OtherProceedings of the 1994 IEEE LEOS Annual Meeting. Part 1 (of 2)
CityBoston, MA, USA
Period10/31/9411/3/94

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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