Abstract
Silicon, an indirect gap semiconductor, can emit light with 10% efficiency at room temperature, provided that it is in the form of low-dimensional (quantum dots or wires) nanostructures. Porous silicon is the best known example of such nanostructures. The luminescence mechanisms and the relationship between bandgap energy, luminescence energy, and size are discussed. Stable and relatively efficient light emitting devices have been manufactured and integrated with silicon microelectronic circuits.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3-13 |
| Number of pages | 11 |
| Journal | Physica Status Solidi (A) Applied Research |
| Volume | 165 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 1998 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics