Porous silicon physics and device applications: A status report

P. M. Fauchet, J. Von Behren, K. D. Hirschman, L. Tsybeskov, S. P. Duttagupta

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

Silicon, an indirect gap semiconductor, can emit light with 10% efficiency at room temperature, provided that it is in the form of low-dimensional (quantum dots or wires) nanostructures. Porous silicon is the best known example of such nanostructures. The luminescence mechanisms and the relationship between bandgap energy, luminescence energy, and size are discussed. Stable and relatively efficient light emitting devices have been manufactured and integrated with silicon microelectronic circuits.

Original languageEnglish (US)
Pages (from-to)3-13
Number of pages11
JournalPhysica Status Solidi (A) Applied Research
Volume165
Issue number1
DOIs
StatePublished - Jan 1998
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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